Location:
San Francisco, California | US
Businesses Attending:
Asylum Research, Plasma Technology, WITec | Raman
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Part of the Oxford Instruments Group
The PlasmaPro 100 Estrelas platform is designed to give total flexibility for Deep Reactive Ion Etching (DRIE) applications - serving a diverse set of process requirements across the Micro Electromechanical Systems (MEMS), Advanced Packaging and Nanotechnology markets. Developed for research and volume production, the PlasmaPro 100 Estrelas offers the ultimate flexibility with Bosch and Cryogenic processes.
High etch rate and high selectivity with Bosch process
Smooth sidewall & high aspect ratio processes
Highly anisotropic (vertical) profile
Low rate, low power for nano-silicon etch and notch control (SOI)
Mechanical or electrostatic clamping (substrates’ compatibility)
DSiE technique or Deep Reactive Ion Etching (DRIE) combines isotropic silicon etching and passivation steps repeatedly to obtain anisotropic profiles. Using high density plasma source and fast gas-switching capability, this technique enables you to achieve profile verticality, smooth sidewalls and high etching rates with high selectivity to masking materials.
From smooth sidewall processes to high rate cavity etches and high aspect ratio processes to tapered via etches, the PlasmaPro 100 Estrelas has been designed to ensure that the wide range of applications in MEMS, advanced packaging and nanotechnology can be realised without the need to change chamber hardware.
Nano and microstructures can be realised as the hardware has been designed with the ability to run Bosch™ and Cryo etch technologies in the same chamber.
Compatible with 50mm to 200mm substrates - ensures you have the ability to develop devices that can be taken to production using the same chamber hardware
Auto match - Process flexibility
Higher flow MFCs and associated generators - High radical densities
Reduced chamber volume and high throughput pumping - Ensures high gas conductance
Fast-acting close-coupled MFCs - Fast control (originally developed for ALD)
Bosch DSiE is typically used for features >1µm and depths >10µm
Cryogenic DSiE is typically used for smooth sidewalls and/or nano-etching and temperature sensitive materials, as it provides low temperature process (» -110°C)
Parameter |
Bosch |
Cryogenic |
Mixed Gas |
Rate (μm/min) |
High |
Moderate |
Low |
Selectivity to PR |
Very High |
High |
Low |
Profile |
Vertical |
Vertical or Sloped |
Vertical or Sloped |
Aspect Ratio |
Very High |
High |
Low |
Sidewalls |
Scallops |
Smooth |
Smooth |
ARDE control |
Yes |
Limited |
Limited |
Cleaning |
Regular |
Rare |
Regular |
Min. feature /nm |
≈ 300 |
≈ 10 |
30 |
Oxford Instruments is committed to providing a comprehensive, flexible and reliable global customer support. We offer excellent quality service throughout the life of your system.
PTIQ is the latest intelligent software solution for PlasmaPro and Ionfab processing equipment.
Gas pod - incorporate extra gas lines and allow greater flexibility
Logviewer software - datalogging software allows realtime graphing and post run analysis
Optical end point detectors - an important tool for achieving optimal process results
Soft pump - allows the slow pumping down of a vacuum chamber
Turbomolecular vacuum pump - offers superior pumping speeds and higher throughput
X20 Control System - delivers a future proof, flexible and reliable tool with increased system ‘intellect’
Advanced Energy Paramount generator - Offering increased reliability and greater plasma stability
Automatic pressure control - This controller ensures very fast and accurate pressure control
Dual CM gauge switching - provides the ability to utilise two differing ranges of capacitance manometer via a single pressure control valve
LN2 autochangeover unit - enables table cooling fluid to be automatically switched between Liquid Nitrogen (LN2) and Chiller Fluid
TEOS liquid level sensing - level sensing is achieved using ultra sonic level sensors fitted to the TEOS canister
Wide temperature range electrode - significant design improvements to increase process performance
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