Part of the Oxford Instruments Group

Inductively Coupled Plasma Chemical Vapour Deposition (ICPCVD)

Creation of high density plasmas in the ICP source means this technique delivers deposition of high quality dielectric films at low temperature with low damage. Low temperature deposition means that temperature sensitive films and devices can be processed successfully.

Our ICP CVD process modules are designed to produce high
quality films with high density plasmas at low deposition
pressures and temperatures.

Diagram of ICPCVD (ICP CVD) system technology


  • Independent control of ion energy and ion current density
  • Typical process pressure: 1- 10 mtorr
  • Plasma density: >1011 cm-3
  • Plasma in contact with the substrate
  • Low energy ion current during deposition
  • Ion Current (Plasma Density) dependent on ICP power
  • ESS (electrostatic screen) for a purely inductive plasma
  • ICP is fully automatic (2 RF automatch units)


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  • Excellent quality low damage films at reduced temperatures.
  • Typical materials deposited include SiO2, Si3N4 and SiON, Si and SiC at substrate temperatures as low as 5ºC
  • ICP source sizes of 65mm, 180mm, 300mm delivering process uniformity up to 200mm wafers
  • Electrodes available for temperature ranges from 5ºC to 400ºC
  • Patented ICPCVD gas distribution technology
  • In situ chamber cleaning with endpointing

PlasmaPro 80 PlasmaPro 100
Electrode size  240mm
Wafer size Up to 200mm
Loading  Open Load Load locked or cassette
Substrates 50mm wafers  Up to 200mm with carriers options available for multi-wafers or small pieces
Dopants  No Various dopants available which include PH<sub>3</sub>, B<sub>2</sub>H<sub>6</sub>, GeH<sub>4</sub>
Liquid precursors No Yes
MFC controlled gas lines 8 or 12 line gas box available 
Wafer stage temperature range  20°C to 400°C 0°C to 400°C
In situ plasma clean  Yes

Our ICPCVD cleaning regime was developed to give reproducible deposition and low particles between mechanical cleans

  • Reduced cleaning time
  • Higher utilisation through optional interleaved clean
  • Accurate endpoint resulting in reduced over-etch of chamber components and increasing their lifetime
Graph showing end point comparison of various ICPCVD plasma cleans

High Rate Clean Process Features

  • System Utilisation >70%
  • SF6 /N2O gas mixture
  • Improved End Point control
  • Plasma clean results in increased optical intensity with greater endpoint signal/resolution
  • Actual plasma clean time depends on film material, film quality and film thickness

Interleaved Clean Mode 

  • High utilisation
  • Highly repeatable deposition rate
  • Low added particle counts maintained with clean after every wafer
  • > 50 microns between mechanical cleans
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ICPCVD Systems

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