ALDAtomfab ALDFlexAL ALD
ALEPlasmaPro 100 ALE
Ion BeamIonfab IBEIonfab IBD
Creation of high density plasmas in the ICP source means this technique delivers deposition of high quality dielectric films at low temperature with low damage. Low temperature deposition means that temperature sensitive films and devices can be processed successfully.
Our ICP CVD process modules are designed to produce high
quality films with high density plasmas at low deposition
pressures and temperatures.
|PlasmaPro 80||PlasmaPro 100|
|Wafer size||Up to 200mm|
|Loading||Open Load||Load locked or cassette|
|Substrates||50mm wafers||Up to 200mm with carriers options available for multi-wafers or small pieces|
|Dopants||No||Various dopants available which include PH<sub>3</sub>, B<sub>2</sub>H<sub>6</sub>, GeH<sub>4</sub> |
|MFC controlled gas lines||8 or 12 line gas box available|
|Wafer stage temperature range||20°C to 400°C||0°C to 400°C|
|In situ plasma clean||Yes|
Our ICPCVD cleaning regime was developed to give reproducible deposition and low particles between mechanical cleans