The Cobra® ICP etching sources produce a high density of reactive species at low pressure. Substrate DC bias is independently controlled by an RF generator, allowing control of ion energy according to process requirements.
The PlasmaPro 100 Cobra ICP utilises high-density plasma to achieve fast etching and deposition rates. The process modules offer excellent uniformity, high-throughput, high-precision…
An evolution in single wafer etch technology
With extensive experience of etching materials such as GaN, SiC and Sapphire, our technologies enable the…
The PlasmaPro 80 ICP is a compact, small footprint system offering versatile ICP etch solutions with convenient open loading. It is easy to site and easy to use, with no compromise…