Part of the Oxford Instruments Group

Ion Beam Deposition (IBD)

Ion Beam Deposition is a versatile and flexible thin film deposition technique that offers reliable, high quality and high performance coatings, finding applications notably in infrared devices and high power lasers, for both R&D and the Production market.

Ion Beam Deposition Diagram with Ar


  • Independent control of beam energy and ion density
  • Precise deposited thickness and fine control of film properties
  • Excellent uniformity and repeatability
  • Low operating pressure for higher mean free path, higher film purity, film more dense
  • Reduced porosity and included gas in deposited films
  • Substrate temperature control between 15°C and 300°C
  • Pre-clean capability for better film adhesion
  • Ultra-smooth coating with low scattering, added surface roughness <nm scale
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How does IBD work?

A beam or energetic ions bombars and sputters material off a target, thereby forming a plume of material that gets deposited on the surface of the sample.

Ion beam deposited thin-film layer properties, such as refractive index, absorption, scattering, adhesion and packing density, can be finely tuned by varying beam parameters such as beam flux and energy, platen orientation relative to incoming materials and gas flow.

Ion Beam Deposition (IBD) is one of three ways of depositing thin-film using Ion Beam Sputtering: IBD, RIBD and AIBD.

Key Benefits

  • High quality thin film with ultra low contamination
  • Unmatched batch uniformity and process reproducibility
  • In-situ monitoring and closed-loop feedback control capability for enhanced repeatability and fine control of thin film properties
  • Patented high speed substrate holder (up to 500RPM) equipped with a White Light Optical Monitor (WLOM) design for very accurate in-situ optical film control, noticeably for high-power laser devices
  • Very low surface film roughness
  • Low temperature and operating pressure deposition

Deposition Ion Source Features

  • Deposition ion source: 15cm, 13.56 MHz driven
  • Gas inlet through source
  • Multiple targets with rotating shutter
  • Target and grid set to maximize deposition rate and film purity
  • Rotating and tiltable high speed substrate holder
Ionfab 300
Ion deposition source  150mm
Deposited area Up to 200mm
Number of targets Up to 4 targets
Platen size  Up to 8 inch wafer
End product detection  Dual Xtal monitors or WLOM
Platen rotation Up to 500rpm
Platen tilt angle  -90ºC (load position) to +65ºC
Platen heat Embedded heaters up to 300ºC
Platen cooling Helium
Assist or pre-clean source 150mm and 300mm RF ion source
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IBD systems