|Ionfab 300 |
|Ion deposition source||150mm|
|Deposited area||Up to 200mm|
|Number of targets||Up to 4 targets|
|Platen size||Up to 8 inch wafer|
|End product detection||Dual Xtal monitors or WLOM|
|Platen rotation||Up to 500rpm|
|Platen tilt angle||0º to 75º between beam and normal to substrate surface|
|Platen heat||Embedded heaters up to 300ºC|
|Platen cooling||Fluid coolant 5ºC to 60ºC with He or Ar backside gas for substrate cooling (up to 50Torr)|
|Assist or pre-clean source||150mm and 300mm RF ion source|
A beam of energetic ions bombards and sputters material from a target, thereby forming a plume of material that gets deposited onto the surface of the sample. Ion beam deposited thin films layer properties, such as refractive index, absorption, scattering, adhesion and packing density, can be finely tuned by varying beam parameters such as beam flux and energy, platen orientation relative to incoming materials and gas flow.
Ion Beam Deposition (IBD) is one of three ways of depositing thin-film using Ion Beam Sputtering: IBD, RIBD and IBAD.
32-layer GRIN lens with IBD
7 layers of a GRIN structure with IBD
Ionfab is our flexible ion beam etch and deposition system designed for research, pilot and full-scale production. The system provides two options of chambers; standard and large, enabling IBD process on wafers up to 200mm.