Industry-leading processes & systems for Failure Analysis dry etching de-processing
Yield management is a key factor in semiconductor manufacturing. To improve yield, one key technique is the de-processing of a failed chip or wafer to find and analyse the failure point in order to eliminate it.
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- Isotropic polyimide removal (RIE or ICP mode)
- Isotropic Nitride (passivation) removal (PE or ICP mode)
- Anisotropic Oxide (IMD/ILD) removal (RIE or ICP mode)
- Anisotropic Low-K Oxide removal (RIE or ICP mode)
- Metal skeleton removal (RIE or ICP mode)
- Poly-Si removal (RIE mode)
- Al and Cu removal (ICP mode)
- Backside Bulk Si removal (ICP mode)
FA White Paper
In this white paper we present a suite of plasma processing tools for FA with the aim of providing practical guidance as to their suitability for different tasks.
For analysis or defect identification to be performed the device must be suitably prepared, this becomes more challenging as device architectures become ever more 3-dimensional. Plasma assisted etch and deposition are used to ensure accurate, quickly achieved results.
- Problems throughout the structure can be traced and analysed with fast and clean removal of Polymide, IMD and metals allowing access to underlying layers
- Decorating samples by thin film deposition greatly enhances accuracy of TEM and SEM analysis
Oxford Instruments’ flexible Failure Analysis (FA) tools allow a wide range of processes, able to process small die or packaged devices through to 300mm wafers. Well controlled processing means that there is no damage to the metal conducting tracks.
Failure Analysis products