PlasmaPro ASP

Based on production-proven platform for corporate/specialised R&D, PlasmaPro ASP has been designed to ensure high quality materials that can be deposited at speed with flexibility to run multiple chemistries to give excellent layers for incorporation into devices. Our cutting-edge Plasma Enhanced ALD system offers flexibility, conformality, and tunability of ALD with speed for higher throughput and thicker films.

3x faster than conventional remote plasma
Reduced precursor consumption which is beneficial for the environment and cost of running
High material quality
Low cost of ownership
Improved serviceability and maintenance
Low volume chamber for speed
Low substrate damage
Higher process stability

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PlasmaPro ASP has shared platform with Atomfab to deliver fast and low damage remote plasma enhanced ALD. Remote plasma ALD offers superior device performance compared to thermal ALD and direct plasma ALD. It is compact to limit the effective chamber volume for rapid gas exchange and it is effective over the full 200mm wafer diameter.

High speed remote plasma source
- High and uniform radical density and low ion energies for low damage, fast saturation
- PLC and AMU control allows rapid striking
Excellent precursor and process control
- Up to 6 precursors, bubbled or vapour drawn

Wafer electrode
- 200 mm wafer electrode with bias
- Up to 400 °C deposition temp.
- 200 °C heated inner chamber
Control system
- Ease of service, and simplified wiring
- Improved diagnostics for service
- No separate ‘electronics’ rack

Low damage GaN HEMT passivation for power electronics and RF devices

Low-oxygen content conductive nitrides with all-metal plasma source enabling fast cycle times, suitable for quantum devices

Low damage graphene encapsulation for Datacom applications

Images (above): 130 nm conformal superconducting NbN deposited in 8:1 aspect ratio trench using PlasmaPro ASP.

Image (left): 450 nm conformal SiO2 deposited in 32:1 aspect ratio trench using PlasmaPro ASP.

Specifications	PlasmaPro ASP
Precursor Lines	Maximum 6 (any combination)
Precursor size (ml)	200
Precursor type	Vapour draw - cooled Vapour draw - heated Bubbled – heated
Handling	Loadlock
Gas pod	4 Process + 1 Ar (Onboard)
Electrode	400 °C grounded/ biased
Roughing Pump	600 m³/hr
Compliance	UL Standard, Designed for SEM 2S
Software	PTIQ
PEALD Process Library	Al₂O₃, SiO₂, NbN, TiN, more in development

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Case Study

We collaborate for over 15 years with Eindhoven University of Technology (TU/e) and together we continue to make significant progress in Atomic Layer Deposition (ALD) research which is one of the most rapidly evolving techniques used in many applications of nanofabrication.

We are very pleased to present the research projects of two PhD students from TU/e who have used Oxford Instruments’ FlexAL ALD system featuring a remote inductively coupled plasma source, enabling high-quality deposition. Using advanced plasma ALD technology, Karsten Arts has achieved conformal deposition on high aspect ratio features and Marc Merkx has achieved highly selective growth of Titanium Nitride (TiN).

FlexAL ALD Case Study with Eindhoven University

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Testimonial

"One of the greatest advantages of FlexAL system is the plasma capabilities."

Marc J. M. Merkx - Department of Applied Physics, Eindhoven University of Technology

Global Customer Support

Oxford Instruments is committed to providing comprehensive, flexible, and reliable global customer support. We offer excellent quality service throughout the life of your system.

Remote diagnostics software provides quick and easy fault diagnosis and resolution.
Support contracts are available to suit the budget and situation.
Global spares in strategic locations for quick response.

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