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The FlexAL atomic layer deposition (ALD) system offers a broad range of optimised high-quality plasma ALD and thermal ALD processes with maximum flexibility in precursors, processes gases, and hardware configuration within a single process chamber.

  • Remote plasma for low damage plasma ALD combined with thermal ALD in one deposition chamber

  • RF biased electrode option available for control of film properties

  • Industry-standard cassette to cassette handling for higher throughput

  • Maximum flexibility in the choice of precursors, process gases, hardware features and options

  • Optimised to maintain low-damage, high-quality substrates

  • Removable liners allow for easy chamber maintenance

  • Low temperature to enable high-quality deposition on temperature-sensitive surfaces

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The ALD product family encompasses a range of tools to meet the varied demands of academia, corporate R&D and small-scale production. Oxford Instruments has an extensive process library, and new processes are continually being developed. We provide free ongoing process support for the lifetime of any ALD tool, offering advice on developing new materials and continued access to our latest ALD process developments including new process recipes.

Ions play an important role in plasma ALD processes. Ions can improve film quality, particularly for nitrides and at lower deposition temperatures. However, certain interfaces and substrates can be sensitive to ions leading to device damage. The FlexAL ALD system precisely controls plasma ions with an advanced plasma source and automatic matching unit (AMU), allowing the maximum benefit of plasma whilst minimizing damage.

  • Chamber ports/windows for the integration of in-situ analysis equipment, e.g. ellipsometry
  • Automated single-wafer load-lock for loading of substrates up to 200 mm
  • Clusterable with additional process modules with vacuum transfer between chambers
  • Fully illustrated precursor exchange procedures with checklists
  • Cleanroom interface available for through-wall installation
  • Ozone generator available for integration
  • Wide range of electrode options – grounded and biased electrodes
  • Turbomolecular pump benefits moisture-sensitive nitrides and metals
  • RF table bias option for film property enhancements such as conductivity, crystallinity, stress control
  • Superconducting nitrides for quantum devices (e.g. TiN, NbN)
  • GaN HEMT pre-treatment and passivation
  • High quality high-k gate oxides for graphene passivation (e.g. titanium oxide, silicon oxide, gallium oxide)
  • ALD of 2D transition metal dichalcogenides (TMDCs)
  • Pinhole-free passivation layers for OLEDs and polymers
  • Passivation of crystalline silicon solar cells
  • ALD moisture barriers and passivation of sensitive substrates
  • Highly conformal coatings for microfluidic devices

Plasma ALD for Al2o3 - Courtesy by TUe
Plasma ALD for SiO2 - Courtesy by TUe

Images: High conformality of plasma ALD Al2O3 (left image) and SiO2 (right image) - Courtesy by Eindhoven University of Technology

Conformal deposition of SiO2, TiO2 and Al2O3 by Plasma ALD

Image: Conformal deposition of SiO2, TiO2 and Al2O3 by Plasma ALD(CC BY 4.0 license), image library at, 2021

Wafer size: up to 200 mm

Plasma source generators: 300 W or 600 W

Temperature range: From 30 up to 550 °C​ (with table bias)


  • Precursor options for research (up to 100 g) and production (up to 500 g)​
  • Up to 8 metal liquid or solid rapid bubbled precursors
  • Up to 10 plasma and thermal gas precursors​
  • Water pot standard
  • Ozone generator optional

Cluster with: PECVD, ICPCVD, RIE and Sputter modules

FlexAL ALD Brochure
Case Study: Eindhoven University of Technology (TU/e)
Blog: Atomic Layer Deposition for 2D Materials

Case Study

We collaborate for over 15 years with Eindhoven University of Technology (TU/e) and together we continue to make significant progress in Atomic Layer Deposition (ALD) research which is one of the most rapidly evolving techniques used in many applications of nanofabrication.

We are very pleased to present the research projects of two PhD students from TU/e who have used Oxford Instruments’ FlexAL ALD system featuring a remote inductively coupled plasma source, enabling high-quality deposition. Using advanced plasma ALD technology, Karsten Arts has achieved conformal deposition on high aspect ratio features and Marc Merkx has achieved highly selective growth of Titanium Nitride (TiN).


"One of the greatest advantages of FlexAL system is the plasma capabilities."

Marc J. M. Merkx - Department of Applied Physics, Eindhoven University of Technology

Global Customer Support

Oxford Instruments is committed to providing comprehensive, flexible and reliable global customer support. We offer excellent quality service throughout the life of your system.

  • Remote diagnostics software provides quick and easy fault diagnosis and resolution.
  • Support contracts are available to suit the budget and situation.
  • Global spares in strategic locations for quick response.



The FlexAL2D system provides ALD of 2D transition metal dichalcogenides (TMDCs) for nanodevice applications and offers a number of benefits for growth of 2D materials

2D Materials Growth

  • At CMOS compatible temperatures
  • With precise digital thickness control
  • Over a large area (200mm wafers)

Robust ALD Processes for 2D Materials

  • Self-limiting ALD growth.
  • MoS2
  • Oxygen- and carbon-free (< 2%)
  • High growth per cycle ~0.1 nm/cycle
  • Crystalline material above 300°C

Tunable Morphology

  • Control over basal plane or edge plane orientation
  • Growth of ALD dielectrics & other ALD layers on 2D materials in one tool
  • Create advanced 2D device structures
  • RF substrate biasing option for film property control


Gas pod - incorporate extra gas lines and allow greater flexibility

Logviewer software - datalogging software allows realtime graphing and post run analysis

Optical end point detectors - an important tool for achieving optimal process results

X20 Control System - delivers a future proof, flexible and reliable tool with increased system ‘intellect’

Dual CM gauge switching - provides the ability to utilise two differing ranges of capacitance manometer via a single pressure control valve

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