The FlexAL atomic layer deposition (ALD) system offers a broad range of optimised high-quality plasma ALD and thermal ALD processes with maximum flexibility in precursors, processes gases, and hardware configuration within a single process chamber.
Remote plasma for low damage plasma ALD combined with thermal ALD in one deposition chamber
RF biased electrode option available for control of film properties
Industry-standard cassette to cassette handling for higher throughput
Maximum flexibility in the choice of precursors, process gases, hardware features and options
Optimised to maintain low-damage, high-quality substrates
Removable liners allow for easy chamber maintenance
Low temperature to enable high-quality deposition on temperature-sensitive surfaces
The ALD product family encompasses a range of tools to meet the varied demands of academia, corporate R&D and small-scale production. Oxford Instruments has an extensive process library, and new processes are continually being developed. We provide free ongoing process support for the lifetime of any ALD tool, offering advice on developing new materials and continued access to our latest ALD process developments including new process recipes.
Ions play an important role in plasma ALD processes. Ions can improve film quality, particularly for nitrides and at lower deposition temperatures. However, certain interfaces and substrates can be sensitive to ions leading to device damage. The FlexAL ALD system precisely controls plasma ions with an advanced plasma source and automatic matching unit (AMU), allowing the maximum benefit of plasma whilst minimizing damage.
Images: High conformality of plasma ALD Al2O3 (left image) and SiO2 (right image) - Courtesy by Eindhoven University of Technology
Image: Conformal deposition of SiO2, TiO2 and Al2O3 by Plasma ALD, (CC BY 4.0 license), image library at www.AtomicLimits.com, 2021
Wafer size: up to 200 mm
Plasma source generators: 300 W or 600 W
Temperature range: From 30 up to 550 °C (with table bias)
Cluster with: PECVD, ICPCVD, RIE and Sputter modules
We collaborate for over 15 years with Eindhoven University of Technology (TU/e) and together we continue to make significant progress in Atomic Layer Deposition (ALD) research which is one of the most rapidly evolving techniques used in many applications of nanofabrication.
We are very pleased to present the research projects of two PhD students from TU/e who have used Oxford Instruments’ FlexAL ALD system featuring a remote inductively coupled plasma source, enabling high-quality deposition. Using advanced plasma ALD technology, Karsten Arts has achieved conformal deposition on high aspect ratio features and Marc Merkx has achieved highly selective growth of Titanium Nitride (TiN).
"One of the greatest advantages of FlexAL system is the plasma capabilities."
Marc J. M. Merkx - Department of Applied Physics, Eindhoven University of Technology
Oxford Instruments is committed to providing comprehensive, flexible and reliable global customer support. We offer excellent quality service throughout the life of your system.
The FlexAL2D system provides ALD of 2D transition metal dichalcogenides (TMDCs) for nanodevice applications and offers a number of benefits for growth of 2D materials
2D Materials Growth
Robust ALD Processes for 2D Materials
Gas pod - incorporate extra gas lines and allow greater flexibility
Logviewer software - datalogging software allows realtime graphing and post run analysis
Optical end point detectors - an important tool for achieving optimal process results
X20 Control System - delivers a future proof, flexible and reliable tool with increased system ‘intellect’
Dual CM gauge switching - provides the ability to utilise two differing ranges of capacitance manometer via a single pressure control valve
Oxford Instruments Receive Tier 1 Orders for Indium Phosphide High Volume…
Oxford Instruments and ITRI announce breakthrough development in GaN HEMT…
Oxford Instruments validates power devices with technology acceleration…