Part of the Oxford Instruments Group
Our ion beam etch (IBE) &
deposition (IBD) system is a popular choice for high-quality material
processing. Our systems have flexible hardware options including open load,
single substrate load lock, and cassette to cassette. System specifications are
closely tuned to applications, enabling faster and repeatable process results.
Multiple mode functionality, etch and deposition in a single chamber
Single wafer load lock or cluster wafer handling
Capable of clustering with other OIPT plasma etch and deposition tools
Unmatched batch uniformity and process reproducibility
Ion beam technology provides an exceptionally versatile approach to etch and deposition by offering a single tool and maximising system utilisation. Ion beam etch offers maximum flexibility coupled with excellent uniformity.
Our systems have flexible hardware options including open load, single substrate load lock and cassette to cassette. System specifications are closely tuned to applications, enabling faster and repeatable process results.
Wafer size |
100 mm |
200 mm | |||||||||
Etch RF ion source |
15 cm |
30 cm | |||||||||
Substrate rotation speed |
Up to 20 RPM | ||||||||||
Substrate tilt angle |
-90° horizontal to +65° facing down | ||||||||||
Platen temperature |
10 °C to 300 °C chiller or heater configuration | ||||||||||
Need more information about Ionfab for IBE?
CONTACT USIon beam technology provides an exceptionally versatile approach to etch and deposition by offering a single tool and maximising system utilisation. Our ion beam deposition products are chosen for their ability to produce deposited films with high quality, dense and smooth surfaces.
Our systems have flexible hardware options including open load, single substrate load lock and cassette to cassette. System specifications are closely tuned to applications, enabling faster and repeatable process results.
Wafer size |
100 mm |
200 mm | |||||||||
Deposition ion source |
15 cm |
15 cm | |||||||||
Substrate rotation speed |
Up to 20 RPM | ||||||||||
Substrate tilt angle |
-90° horizontal to +65° facing down | ||||||||||
Platen temperature |
10 °C to 300 °C chiller or heater configuration | ||||||||||
Need more information about Ionfab for IBD?
CONTACT USA compact ion beam etch and deposition system designed for flexible research and pilot production, equipped with up to two (15cm) ion sources for etch or deposition. This makes it ideal for deposition on up to 200 mm wafer size and etch process optimised for up to 100 mm wafer size.
Having essentially the same footprint but with a larger process chamber, it is designed to process wafers up to 200 mm for both etch and deposition. Equipped with a 30 cm etch ion source, the system provides excellent etch uniformity and superior process stability, making it a great choice for pilot and full scale production.
Oxford Instruments is committed to providing a comprehensive, flexible and reliable global customer support. We offer excellent quality service throughout the life of your system.
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