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PlasmaPro 100 ICPCVD

The ICP CVD process module is designed to produce high quality films from room temperature to 400°C with high density plasmas at low deposition pressures and temperatures.

  • Excellent uniformity, high throughput and high precision processes

  • High quality films
  • Wide temperature range electrode
  • Compatible with all wafer sizes up to 200mm
  • Rapid change between wafer sizes
  • Low cost of ownership and ease of serviceability
  • Compact footprint, flexible layout
  • Resistive heated electrodes with capability up to 400°C or 1200°C
  • In-situ chamber cleaning and end-pointing


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  • Excellent quality low damage films at reduced temperatures.
  • Typical materials deposited include SiO2, Si3N4 and SiON, Si and SiC at substrate temperatures as low as 5ºC
  • ICP source sizes of 65mm, 180mm, 300mm delivering process uniformity
    up to 200mm wafers
  • Electrodes available for temperature ranges from 5ºC to 400ºC
  • Patented ICPCVD gas distribution technology
  • In situ chamber cleaning with endpointing
SiO2

SiO2 deposited using TEOS and O2 by ICP CVD in ~50μm deep trench 4:1 aspect ratio

SiNx

SiNx deposited by ICP CVD at room temperature for 22nm T-gate HEMT

  • Wall heating reduces chamber wall deposition
  • Helium backside cooling with mechanical clamping ensures uniform wafer temperatures & optimised film properties
Download PlasmaPro 100 brochure

Upgrades/Accessories

Gas pod - incorporate extra gas lines and allow greater flexibility

Logviewer software - datalogging software allows realtime graphing and post run analysis

Optical end point detectors - an important tool for achieving optimal process results

Soft pump - allows the slow pumping down of a vacuum chamber

Turbomolecular vacuum pump - offers superior pumping speeds and higher throughput

X20 Control System - delivers a future proof, flexible and reliable tool with increased system ‘intellect’

Advanced Energy Paramount generator - Offering increased reliability and greater plasma stability

Automatic pressure control - This controller ensures very fast and accurate pressure control

Dual CM gauge switching - provides the ability to utilise two differing ranges of capacitance manometer via a single pressure control valve

LN2 autochangeover unit - enables table cooling fluid to be automatically switched between Liquid Nitrogen (LN2) and Chiller Fluid

TEOS liquid level sensing - level sensing is achieved using ultra sonic level sensors fitted to the TEOS canister

Wide temperature range electrode - significant design improvements to increase process performance

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