Read more about how ALD can optimise GaN power devices in our white paper.
|Plasma ALD Al<sub>2</sub>O<sub>3</sub> at 300 °C
|Within wafer thickness uniformity||<±1.0%|
|Wafer-to-wafer thickness repeatability||<±1.0%|
|Breakdown voltage||≥7.0 MV/cm|
Atomfab MMX System – Front View
Atomfab Close-Up Side View
Atomfab MX600 Cluster System
Atomfab System – Doors Open
Atomfab MMX – Open MMX
Join us on the 17 July 2019 at either 8:30 or 16:00 BST for a masterclass webinar in ALD for GaN with our expert, Dr Aileen O'Mahony. We'll look at how you can achieve excellent uniformity, optimised process conditions for low substrate damage, high material quality for superior device performance and conformal deposition. The webinar also includes an introduction to the Atomfab ALD system.