The PlasmaPro 100 ALE delivers precise process control of etching for next-generation semiconductor devices. Specially designed for processes such as recess etching for GaN HEMT applications and nanoscale layer etching, the system's digital/cyclical etch process offers low damage, smooth surfaces.
Digital/Cyclical etch process – etching equivalent of ALD
Smooth etch surface
Superb etch depth control
Ideal for nanoscale layer etching (e.g. 2D Materials)
Wide range of processes and applications
As layers become thinner to enable the next-generation semiconductor devices, there is a need for ever more precise process control to create and manipulate these layers. The PlasmaPro 100 ALE delivers this by enhancing our Cobra ICP platform with specialised hardware for atomic layer etching.
Delivers reactive species to the substrate, with a uniform high conductance path through the chamber - Allows a high gas flow to be used while maintaining low pressure
Variable height electrode - Utilises the 3-dimensional characteristics of the plasma and accommodate substrates up to 10mm thick at optimum height
Wide temperature range electrode (-150°C to +400°C) which can be cooled by liquid nitrogen, a fluid re-circulating chiller or resistively heated - An optional blow out and fluid exchange unit can automate the process of switching modes
A fluid controlled electrode fed by a re-circulating chiller unit - Excellent substrate temperature control
RF powered showerhead with optimised gas delivery - Provides uniform plasma processing with LF/RF switching allowing precise control of film stress
ICP source sizes of 65 mm, 180 mm, 300 mm - Delivers process uniformity up to 200 mm wafers
High pumping capacity - Gives wide process pressure window
Wafer clamping with He backside cooling - Optimum wafer temperature control
Gallium Nitride (GaN) provides higher breakdown strength, faster switching speed, and higher thermal conductivity for power electronics and RF applications. To support the high-volume manufacture of reliable GaN HEMT devices, Oxford Instruments in collaboration with LayTec have developed and optimised a new etch-depth monitoring solution to reliably fabricate GaN HEMT device structures.
PlasmaPro 100 ALE with Etchpoint® system provides low damage etching with surface smoothing with unparalleled accuracy in target etch depth for devices such as p-GaN HEMTs and recessed gate MISHEMTs. Etchpoint is fully integrated with both the hardware and software of the PlasmaPro 100 ALE system, offering unrivalled accuracy of etch layer depth for GaN and AlGaN.LEARN MORE
Oxford Instruments is committed to providing a comprehensive, flexible and reliable global customer support. We offer excellent quality service throughout the life of your system.
PTIQ is the latest intelligent software solution for PlasmaPro and Ionfab processing equipment.
Gas pod - incorporate extra gas lines and allow greater flexibility
Logviewer software - datalogging software allows realtime graphing and post run analysis
Optical end point detectors - an important tool for achieving optimal process results
Soft pump - allows the slow pumping down of a vacuum chamber
Turbomolecular vacuum pump - offers superior pumping speeds and higher throughput
X20 Control System - delivers a future proof, flexible and reliable tool with increased system ‘intellect’
Advanced Energy Paramount generator - Offering increased reliability and greater plasma stability
Automatic pressure control - This controller ensures very fast and accurate pressure control
Dual CM gauge switching - provides the ability to utilise two differing ranges of capacitance manometer via a single pressure control valve
LN2 autochangeover unit - enables table cooling fluid to be automatically switched between Liquid Nitrogen (LN2) and Chiller Fluid
Wide temperature range electrode - significant design improvements to increase process performance
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