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PlasmaPro 100 ALE

The PlasmaPro 100 ALE delivers precise process control of etching for next-generation semiconductor devices. Specially designed for processes such as recess etching for GaN HEMT applications and nanoscale layer etching, the system's digital/cyclical etch process offers low damage, smooth surfaces.

  • Digital/Cyclical etch process – etching equivalent of ALD

  • Low damage

  • Smooth etch surface

  • Superb etch depth control

  • Ideal for nanoscale layer etching (e.g. 2D Materials)

  • Wide range of processes and applications

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As layers become thinner to enable the next-generation semiconductor devices, there is a need for ever more precise process control to create and manipulate these layers. The PlasmaPro 100 ALE delivers this by enhancing our Cobra ICP platform with specialised hardware for atomic layer etching.

  • Delivers reactive species to the substrate, with a uniform high conductance path through the chamber - Allows a high gas flow to be used while maintaining low pressure

  • Variable height electrode - Utilises the 3-dimensional characteristics of the plasma and accommodate substrates up to 10mm thick at optimum height

  • Wide temperature range electrode (-150°C to +400°C) which can be cooled by liquid nitrogen, a fluid re-circulating chiller or resistively heated - An optional blow out and fluid exchange unit can automate the process of switching modes

  • A fluid controlled electrode fed by a re-circulating chiller unit - Excellent substrate temperature control

  • RF powered showerhead with optimised gas delivery - Provides uniform plasma processing with LF/RF switching allowing precise control of film stress

  • ICP source sizes of 65 mm, 180 mm, 300 mm - Delivers process uniformity up to 200 mm wafers

  • High pumping capacity - Gives wide process pressure window

  • Wafer clamping with He backside cooling - Optimum wafer temperature control

  • Low damage p-GaN HEMTs and recessed gate MISHEMTs etch for power electronics and RF devices
  • 2D materials patterning/thinning
  • Nanostructured SiO2, Si, SiN
  • III-V materials
  • Solid-state lasers InP etch
  • VCSEL GaAs/AlGaAs etch
  • Hard mask deposition and etch for high brightness LED production
  • SiO2 and quartz etch

PlasmaPro 100 ALE & Etchpoint

Gallium Nitride (GaN) provides higher breakdown strength, faster switching speed, and higher thermal conductivity for power electronics and RF applications. To support the high-volume manufacture of reliable GaN HEMT devices, Oxford Instruments in collaboration with LayTec have developed and optimised a new etch-depth monitoring solution to reliably fabricate GaN HEMT device structures.

PlasmaPro 100 ALE with Etchpoint® system provides low damage etching with surface smoothing with unparalleled accuracy in target etch depth for devices such as p-GaN HEMTs and recessed gate MISHEMTs. Etchpoint is fully integrated with both the hardware and software of the PlasmaPro 100 ALE system, offering unrivalled accuracy of etch layer depth for GaN and AlGaN.


Global Customer Support

Oxford Instruments is committed to providing a comprehensive, flexible and reliable global customer support. We offer excellent quality service throughout the life of your system.

  • Remote diagnostics software provides quick and easy fault diagnosis and resolution.
  • Support contracts are available to suit the budget and situation.
  • Global spares in strategic locations for quick response.

NEW: PTIQ Software

PTIQ is the latest intelligent software solution for PlasmaPro and Ionfab processing equipment.

  • Exceptional level of responsive system control
  • Optimise system and process performance
  • Different levels of software to suit your requirements
  • Brand new intuitive layout and design


Gas pod - incorporate extra gas lines and allow greater flexibility

Logviewer software - datalogging software allows realtime graphing and post run analysis

Optical end point detectors - an important tool for achieving optimal process results

Soft pump - allows the slow pumping down of a vacuum chamber

Turbomolecular vacuum pump - offers superior pumping speeds and higher throughput

X20 Control System - delivers a future proof, flexible and reliable tool with increased system ‘intellect’

Advanced Energy Paramount generator - Offering increased reliability and greater plasma stability

Automatic pressure control - This controller ensures very fast and accurate pressure control

Dual CM gauge switching - provides the ability to utilise two differing ranges of capacitance manometer via a single pressure control valve

LN2 autochangeover unit - enables table cooling fluid to be automatically switched between Liquid Nitrogen (LN2) and Chiller Fluid

Wide temperature range electrode - significant design improvements to increase process performance

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