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Our Customers' Research

Publications Database

We are proud of the ground-breaking R&D our customers are doing on our systems and we want to spread the word of their work.

Our customers' research has a huge contribution towards technological advancements that positively impact many disciplines from novel optoelectronics and quantum technologies to advanced materials.

If you like to send us your published research, please complete the form and submit your publication link, including the Oxford Instruments deposition or etch system that has been used in the course of your work.

Submit Your Publication Link
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  • Complete the online form with your details
  • Submit the process technology and the Oxford Instruments Plasma Technology system
  • Submit the publication link

Our Customers' Published Research

Publication Date

Research Paper

Authors & Publication Link

Used OI system/technology 

Applications

June 2022

ICP etching of GaN microstructures in a Cl2–Ar plasma with subnanometer-scale sidewall surface roughness

Clint D. Frye, Catherine E. Reinhardt, Scott B. Donald, Lars F. Voss and Sara E. Harrison

PlasmaPro 100 ICP

Power devices, Discretes (GaN PE/RF)

May 2022

Plasma enhanced atomic layer etching of high-k layers on WS2

J.-F. de Marneffe, D. Marinov, A. Goodyear, P.-J. Wyndaele, N. St. J. Braithwaite, S. Kundu, I. Asselberghs, M. Cooke and S. De Gendt

PlasmaPro 100 ICP, PlasmaPro 100 ALE

2D Materials

May 2022

High synergy atomic layer etching of AlGaN/GaN with HBr and Ar

Kevin G. Crawford, James Grant, Dilini Tania Hemakumara, Xu Li, Iain Thayne and David A. J. Moran

PlasmaPro 100 ALE

Power Devices

January 2022

Surface-Oxide-Controlled InAlGaN/GaN High-Electron-Mobility Transistors Using Al2O3-Based Insulated-Gate Structures with H2O Vapor Pretreatment

Shiro Ozaki, Junya Yaita, Atsushi Yamada, Yuichi Minoura, Toshihiro Ohki, Naoya Okamoto, Norikazu Nakamura and Junji Kotani

FlexAL ALD

Power Devices

October 2021

On the quantification of Auger recombination in crystalline silicon

Lachlan E. Black and Daniel H. Macdonald

FlexAL ALD

Semiconductors

September 2021

Innovative remote plasma source for atomic layer deposition for GaN devices

Harm C. M. Knoops, Karsten Arts, Jan W. Buiter, Luca Matteo Martini, Richard Engeln, Dilini Tania Hemakumara, Michael Powell, Wilhelmus M. M. (Erwin) Kessels, Chris J. Hodson and Aileen O’Mahony

Atomfab ALD

RF Devices, Power Devices

September 2021

Effect of O2 plasma exposure time during atomic layer deposition of amorphous gallium oxide

Hanno Kröncke, Florian Maudet, Sourish Banerjee, Jürgen Albert, Sven Wiesner, Veeresh Deshpande and Catherine Dubourdieu

FlexAL ALD

Semiconductors

July 2021

Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer

Bárbara Canto, Martin Otto, Michael J. Powell, Vitaliy Babenko, Aileen O'Mahony, Harm C. M. Knoops, Ravi S. Sundaram, Stephan Hofmann, Max C. Lemme and Daniel Neumaier

Atomfab ALD, FlexAL ALD

2D Materials, Optoelectronics, NEMS

April 2021

Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2

Karsten Arts, Harvey Thepass, Marcel A. Verheijen, Riikka L. Puurunen, Wilhelmus M. M. Kessels and Harm C. M. Knoops

FlexAL ALD

Semiconductors

February 2021

Selective etching of p-GaN over Al0.25Ga0.75N in Cl2/Ar/O2 ICP plasma for fabrication of normally-off GaN HEMTs

Andrzej Taube, Maciej Kamiński, Marek Ekielski, Renata Kruszka, Joanna Jankowska-Śliwińska, Paweł P. Michałowski, Joanna Zdunek and Anna Szerling

Plasmalab 100 ICP 180

Discretes (GaN PE/RF)

October 2020

Creation of regular arrays of faceted AlN nanostructures via a combined top-down, bottom-up approach

R. Armstrong, P.-M. Coulon, P. Bozinakis, R. W. Martin and P. A. Shields

PlasmaPro 100 Cobra ICP Etching

Optoelectronics, Quantum, Semiconductors

August 2020

Area-Selective Atomic Layer Deposition of TiN Using Aromatic Inhibitor Molecules for Metal/Dielectric Selectivity

Marc J. M. Merkx, Sander Vlaanderen, Tahsin Faraz, Marcel A. Verheijen, Wilhelmus M. M. Kessels and Adriaan J. M. Mackus

FlexAL ALD

Semiconductors

April 2020

Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlN

Matthew D. Smith, Xu Li, Michael J. Uren, Iain G. Thayne and Martin Kuball

PlasmaPro 80 ICP Etching

Optoelectronics, Power Devices, Quantum, RF Devices

March 2020

Low damage etching by Inductively Coupled Plasma Reactive Ion Etch (ICP-RIE) and Atomic Layer Etching (ALE) of III-V materials to enable next generation device performance

Mark Dineen, Matthew Loveday, Andy Goodyear, Mike Cooke, Andrew Newton, Stephanie Baclet, Craig Ward and Tania Hemakumara

PlasmaPro 100 Cobra ICPPlasmaPro 100 ALE

RF Devices, Power Devices

February 2020

Development of low-loss TiO2 waveguides

I. Hegeman, M. Dijkstra, F. B. Segerink, W. Lee and S. M. Garcia-Blanco

PlasmaPro 100 RIE

Optoelectronics

January 2020

Layer-by-Layer Thinning of PdSe2 Flakes via Plasma Induced Oxidation and Sublimation

Anna N. Hoffman, Yiyi Gu, Justin Tokash, Jonathan Woodward, Kai Xiao and Philip D. Rack

PlasmaPro 100 Cobra ICP, PlasmaPro 100 ALE

2D Materials

December 2019

Tuning high-Q superconducting resonators by magnetic field reorientation

Christoph W. Zollitsch, James O’Sullivan, Oscar Kennedy, Gavin Dold and John J. L. Morton

PlasmaPro 100 RIE

Quantum

October 2019

High Power Si Sidewall Heaters for Fluidic Applications Fabricated by Trench-Assisted Surface Channel Technology

H. Veltkamp, Y. Zhao, M. J. de Boer, R. G. P. Sanders, R. J. Wiegerink and J. C. Lötters

PlasmaPro 100 Estrelas (Bosch-based DRIE), Ionfab IBE, PlasmaPro 80 PECVD

Micro Electro Mechanical Systems (MEMS)

September 2019

Balancing ion parameters and fluorocarbon chemical reactants for SiO2 pattern transfer control using fluorocarbon-based atomic layer etching

Stefano Dallorto, Monica Lorenzon, Julia Szornel, Adam Schwartzberg, Andy Goodyear, Mike Cooke, Martin Hofmann, Ivo W. Rangelow and Stefano Cabrini

PlasmaPro 100 Cobra ICP

Semiconductors, MEMs, Optoelectronics

May 2019

Atomic layer etching of SiO2 with Ar and CHF3 plasmas: A self‐limiting process for aspect ratio independent etching

Stefano Dallorto, Andy Goodyear, Mike Cooke, Julia E. Szornel, Craig Ward, Christoph Kastl, Adam Schwartzberg, Ivo W. Rangelow and Stefano Cabrini

PlasmaPro 100 Cobra ICP

Semiconductors, MEMs, Optoelectronics

May 2019

A route towards the fabrication of 2D heterostructures using atomic layer etching combined with selective conversion

Markus H. Heyne, Daniil Marinov, Nicholas Braithwaite, Andy Goodyear, Jean-François de Marneffe, Mike Cooke, Iuliana Radu, Erik C. Neyts and Stefan De Gendt

PlasmaPro 100 Cobra ICP

2D Materials

May 2018

High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching

Sabbir A. Khan, Dmitry B. Suyatin, Jonas Sundqvist, Mariusz Graczyk, Marcel Junige, Christoffer Kauppinen, Anders Kvennefors, Maria Huffman and Ivan Maximov

Plasmalab 100 ALE

Quantum

March 2018

Tuning Material Properties of Oxides and Nitrides by Substrate. Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies

Tahsin Faraz, Harm C. M. Knoops, Marcel A. Verheijen, Cristian A. A. van Helvoirt, Saurabh Karwal, Akhil Sharma, Vivek Beladiya, Adriana Szeghalmi, Dennis M. Hausmann, Jon Henri, Mariadriana Creatore and Wilhelmus M. M. Kessels

FlexAL ALD

Semiconductors

August 2017

Atomic layer etching of gallium nitride (0001)

Christoffer Kauppinena, Sabbir Ahmed Khanc, Jonas Sundqvist, Dmitry B. Suyatin, Sami Suihkonen, Esko I. Kauppinen and Markku Sopanen

Plasmalab 100 ALE

Discretes (GaN PE/RF)

April 2017

A Raman metrology approach to quality control of 2D MoS2 film fabrication

Elisha Mercado, Andy Goodyear, Jonathan Moffat, Mike Cooke and Ravi S. Sundaram

PlasmaPro 100 ALE, PlasmaPro 100 Cobra, PlasmaPro 100 Nano CVD

Optoelectronics, 2D Materials

December 2016

Material and optical properties of low-temperature NH3-free PECVD SiNx layers for photonic applications

Thalía Domínguez Bucio, Ali Z. Khokhar, Cosimo Lacava, Stevan Stankovic, Goran Z. Mashanovich, Periklis Petropoulos and Frederic Y. Gardes

PlasmaPro 100 PECVD

Photonics, Optoelectronics

December 2016

Atomic layer etching in close-to-conventional plasma etch tools

Andy Goodyear and Mike Cooke

PlasmaPro 100 Cobra ICP

Semiconductors

February 2016

Ultra-low temperature silicon nitride photonic integration platform

Zengkai Shao, Yujie Chen, Hui Chen, Yanfeng Zhang, Fangxing Zhang, Jian Jian, Zeming Fan, Lin Liu, Chunchuan Yang, Lidan Zhou and Siyuan Yu

PlasmaPro 100 ICPCVD

Photonics, Optoelectronics

January 2016

Broadband antireflection for a high-index substrate using SiNx/SiO2 by inductively coupled plasma chemical vapour deposition

Kim Peng Lim, Doris K. T. Ng and Qian Wang

PlasmaPro 100 ICPCVD

Compound Semiconductors, MEMs, Optoelectronics

February 2015 

Design and fabrication of suspended indium phosphide waveguides for MEMS-actuated optical buffering

Ng Wing H., Podoliak Nina, Horak Peter, Wu Jiang, Liu Huiyun, Stewart William J. and Kenyon Anthony J.

PlasmaPro 100 RIE

Optoelectronics 

December 2010

Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films

K. B. Jinesh, J. L. van Hemmen, M. C. M. van de Sanden, F. Roozeboom, J. H. Klootwijk, W. F. A. Besling and W. M. M. Kessels

FlexAL ALD

Semiconductor, Quantum

February 2008

Fabrication of 22 nm T-gates for HEMT applications

S. Bentley, X. Li, D. A. J. Moran and I. G. Thayne

PlasmaPro 100 RIE

RF Devices

February 2007

Optimization of plasma-enhanced chemical vapor deposition silicon oxynitride layers for integrated optics applications

M. G. Hussein, K. Wörhoff, G. Sengo and A. Driessen

PlasmaPro 100 PECVD

Photonics, Optoelectronics

October 2006

Low-Hydrogen-Content Silicon Nitride Deposited at Room Temperature by Inductively Coupled Plasma Deposition

Haiping Zhou, Khaled Elgaid, Chris Wilkinson and Iain Thayne

PlasmaPro 100 ICPCVD

RF Devices

Our Customers' Published Research

Creation of regular arrays of faceted AlN nanostructures via a combined top-down, bottom-up approach - R.Armstrong, P-M.Coulon, P.Bozinakis, R.W.Martin, P.A.Shields

High Power Si Sidewall Heaters for Fluidic Applications Fabricated by Trench-Assisted Surface Channel Technology - H. Veltkamp, Y. Zhao, M. J. de Boer, R. G. P. Sanders, R. J. Wiegerink and J. C. Lötters

Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2 - Karsten Arts, Harvey Thepass, Marcel A. Verheijen, Riikka L. Puurunen, Wilhelmus M. M. Kessels, Harm C. M. Knoops