PROCESSES FOR COMPOUND SEMICONDUCTOR RF DEVICES

Oxford Instruments has a wide range of processing equipment suitable for compound semiconductor-based RF devices.

• Our Atomic Layer Deposition (ALD) processes provide excellent passivation of GaN/AlGaN reducing threshold voltage shift, achieved with the fastest remote plasma production system on the market: ATOMFAB.
• Our GaN etch processes for power semiconductor devices are optimised to reduce plasma damage and produce smooth etched profiles
• Etch rates can be tuned to just a few nm/min for ultra low damage and controlled etch of just 10-30nm of AlGaN
• SiC via etch achieves high rate with excellent sidewall quality