Wide Band Gap (WBG) devices are uniquely capable of delivering the RF performance for many modern device technologies. Base stations demand fast switching devices operating at high powers to deliver the volume of data transmission demanded by consumers. New ways of energy creation, dispersion and harvesting is essential for the growing demands of an increasing population. Semiconductor technology such as GaN HEMTs are being used to improve energy usage in green technology such as electric cars and for communications applications such as base station transmission.
Oxford Instruments has a wide range of processing equipment suitable for compound semiconductor-based RF devices.
Atomfab is our latest innovation in ALD system technology, delivering fast pace, low damage, low CoO production plasma ALD processing for GaN power and RF devices.