The use of GaN HEMTs and GaN MISHEMTS offers many benefits for power devices, including high breakdown field, high-temperature operation, and their strong spontaneous and piezoelectric polarization-induced 2D electron gas (2DEG) of high carrier density and mobility. Oxford Instruments and LayTec have partnered to launch innovative solutions to support the high volume manufacture of reliable GaN HEMT devices for power electronics applications. This market is projected to be $1billion in size by 2030 and improved manufacturability of GaN HEMTs is critical to enabling very high growth applications such as USB-C fast-chargers, automated vehicles and datacentres. Through our shared expertise in atomic scale processing and precision in-situ etch depth monitoring, Oxford Instruments and LayTec have solved a key technology challenge – fabrication of a GaN recessed gate MISHEMT with precise control of the etched AlGaN thickness accuracy (+/-0.5 nm) to achieve normally-off device operation. In this webinar, Dr Matthew Loveday and Dr Marcello Binetti will share our recent results on our low damage, and repeatable atomic layer etch process that has been validated at ITRI through the fabrication of normally-off GaN recessed gate MISHEMTs.
This webinar is in collaboration with:
Dr Matthew Loveday is a Principal Applications Engineer at Oxford Instruments Plasma Technology. Since graduating Cardiff University with a PhD in Chemistry, Matthew has been working on dry etch processes for compound semiconductor materials. Recently within the Applications group he has been focused on developing atomic layer etching (ALE) techniques for critical layers in Power and RF device applications.
He has worked on-site at several industrial fabs and research level cleanrooms in the US, Europe and Asia, is author and co-author of several publications and patents, and has presented at numerous international conferences and workshops.
Dr Marcello Binetti is a Senior Scientist for Novel Applications at LayTec. After graduating in Physics at the University of Bari, Marcello Binetti gained his Ph.D. in Physical Chemistry from the University of Essen in 2001 and joined the Fritz-Haber-Institut of the Max Planck Society as postdoc. He joined LayTec in 2004, where he gained a broad experience in semiconductor metrology product support and management, contributing to establish LayTec as a leading provider of effective metrology solutions both in research and production environments. LayTec Manager for Si-SEMI activities (2016 – 2020), he is now senior scientist for novel applications.