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Plasma Enhanced Chemical Vapour Deposition (PECVD)

PECVD is a well established technique for deposition of a wide variety of films. Many types of device require PECVD to create high quality passivation or high density masks.

Our PECVD process modules are specifically designed to produce excellent uniformity and high rate films, with control of film properties such as refractive index, stress, electrical characteristics and wet chemical etch rate.


Diagram showing PECVD system technology

Highlights

  • Top electrode RF driven (MHz and/or kHz); no RF bias on lower (substrate) electrode 
  • Substrate sits directly on heated electrode 
  • Gas injected into process chamber via “showerhead” gas inlet in the top electrode 
  • Film stress can be controlled by high/low frequency mixing techniques 
  • Lower temperature processes compared to conventional CVD

 

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    • SiOx, SiNx and SiOxNy deposition for a wide range of applications including photonics structures, passivation, hard mask, etc. 
    • Amorphous silicon (a-Si:H) 
    • TEOS SiO2 with conformal step coverage, or void-free good step coverage 
    • SiC 
    • Diamond-like carbon (DLC)Offers a wide range of material deposition, including:
  • Plasma cleaning process with end-point control removes or reduces need for physical/chemical chamber cleaning 
  • Control over film stoichiometry via process conditions

PlasmaPro 80 
PlasmaPro 800
PlasmaPro 100
Electrode size
240mm 460mm 240mm 490mm
Substrates Up to 240mm diameter, multi-wafers or small pieces Up to 460mm diameter, multi-wafers or small pieces Up to 200mm diameter with carrier options available for multi-wafers or small pieces Up to 490mm diameter with carrier options available for multi-wafers or small pieces
Dopants No No Various dopants available which include PH<sub>3</sub>, B<sub>2</sub> H<sub>6</sub>, GeH<sub>4</sub> Various dopants available which include PH<sub>3</sub>, B<sub>2</sub>H<sub>6</sub>, GeH<sub>5</sub>
Liquid Precursors No Yes: TEOS
MFC controlled gas lines
4, 8 or 12 line gas box available
RF Switching for Stress Control Yes
Wafer stage temperature range 20°C to 400°C Standard 20°C to 400°C with option for up to 1200°C Standard 20°C to 400°C
Insitu plasma clean Yes. Endpoint available to ensure optimum clean time
Download PlasmaPro 80 Brochure
Download PlasmaPro 800 Brochure
Download PlasmaPro 100 Brochure

PECVD Systems