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Plasma Enhanced Chemical Vapour Deposition (PECVD)

PECVD is a well established technique for deposition of a wide variety of films. Many types of device require PECVD to create high quality passivation or high density masks.

Our PECVD process modules are specifically designed to produce excellent uniformity and high rate films, with control of film properties such as refractive index, stress, electrical characteristics and wet chemical etch rate. Our plasma cleaning process with end-point control removes or reduces the need for physical/chemical chamber cleaning.


    Diagram showing PECVD system technology

    Key Benefits

    • Top electrode RF driven (MHz and/or kHz); no RF bias on lower (substrate) electrode 
    • Substrate sits directly on heated electrode 
    • Gas injected into process chamber via “showerhead” gas inlet in the top electrode 
    • Film stress can be controlled by high/low frequency mixing techniques 
    • Lower temperature processes compared to conventional CVD
    • Control over film stoichiometry via process conditions

     

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    Applications

    • High quality PECVD of silicon nitride and silicon dioxide for photonics, dielectric layers, passivation and many other uses
    • High quality SiOx, SiNx and SiOxNy deposition for a wide range of applications
    • Hard mask deposition and etch for high brightness LED production
    • Amorphous silicon (a-Si:H)
    • TEOS SiO2 with conformal step coverage, or void-free films and conformal step coverage
    • VCSEL manufacturing
    PECVD of vertically aligned grapheneRI

    PECVD of vertically aligned graphene (Courtesy of IMEC, Belgium)

    PECVD of TEOS SiO2

    PECVD of TEOS SiO2

    Hardware

    PlasmaPro 80 PlasmaPro 800 PlasmaPro 100
    Electrode size 240mm 460mm 240mm
    Substrates Up to 240mm diameter, multi-wafers or small pieces Up to 460mm diameter, multi-wafers or small pieces Up to 200mm diameter with carrier options available for multi-wafers or small pieces
    Dopants No No Various dopants available which include PH3, 3B2 H6, GeH4
    Liquid Precursors No Yes (TEOS) No
    MFC controlled gas lines 4, 8 or 12 line gas box available
    RF Switching for Stress Control Yes
    Wafer stage temperature range 20°C to 400°C Standard 20°C to 400°C with option for up to 1200°C Standard 20°C to 400°C
    Insitu plasma clean Yes. Endpoint available to ensure optimum clean time

    PlasmaPro Systems for PECVD

    PlasmaPro 80 PECVD

    PlasmaPro 80 PECVD

    • Excellent wafer temperature uniformity
    • Up to 200mm wafers
    • Low cost of ownership
    • Built to Semi S2/S8 standards
    PlasmaPro 800 PECVD

    PlasmaPro 800 PECVD

    • High-performance processes
    • Excellent substrate temperature control
    • Precise process control
    • Proven processes for 300mm single wafer Failure Analysis
    PlasmaPro 100 PECVD

    PlasmaPro 100 PECVD

    • High-quality films with high throughput
    • Compatible with all wafer sizes up to 200mm
    • Resistive heated electrodes with capability up to 400°C or 1200°C
    Download PlasmaPro 80 Brochure
    Download PlasmaPro 800 Brochure
    Download PlasmaPro 100 Brochure

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