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PlasmaPro 100 Cobra ICP RIE Etch

The PlasmaPro 100 Cobra ICP RIE system utilises a high-density inductively coupled plasma to achieve fast etch rates. The process modules offer excellent uniformity, high-throughput, high-precision and low-damage processes for wafer sizes up to 200mm, supporting a number of markets including, GaAs & InP laser optoelectronics, SiC & GaN power electronics/RF and MEMS & sensors.

  • High etch rate and high selectivity

  • Low damage etch and high repeatability processing

  • Single wafer load lock or clusterable with up to 5 process modules

  • He backside cooling for optimum temperature control

  • Wide temperature range electrode, -150°C to 400°C

  • Compatible with all wafer sizes up to 200mm
  • Rapid change between wafer sizes
  • In-situ chamber cleaning and end-pointing


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The Cobra® ICP plasma source produces high-density reactive species at low pressure. Substrate DC bias is driven by a separate RF generator, allowing independent control of radicals and ions, according to process requirements.

Oxford Instruments’ PlasmaPro 100 process modules offer a 200mm platform with single wafer and multi-wafer batch capability. The process modules offer high throughput, high precision and excellent uniformity with clean smooth vertical profiles and etch surfaces. Our systems have a wide install base within high volume manufacturing (HVM), with well-developed process solutions.

Features

  • Delivers reactive species to the substrate, with a uniform high conductance path through the chamber - Allows a high gas flow to be used while maintaining low chamber pressure, which provides wide process windows for advanced application development
  • Wide temperature range electrode, that can either be cooled by a fluid re-circulating chiller to -20°C and liquid nitrogen to -150°C, or resistively heated to 400°C - An optional blow out and fluid exchange unit can automate the process of switching modes and -20°C to -150°C transition can take as little as 10 mins
  • A fluid-controlled electrode fed by a re-circulating chiller unit - Excellent substrate temperature control
  • ICP source sizes of 65mm or 300mm – 300mm source delivers outstanding process uniformity up to 200mm wafers 
  • Wafer clamping with He backside cooling - Optimum wafer temperature control
ICP RIE Process

Applications

  • Extensive library of III-V etch processes
  • NbN and Ta for Quantum devices
  • Compound Semiconductor Applications:
  • Extensive library of metal etch process: Al, Cr, Ni etc
  • SiOx and SiO2 etch
  • Fused silica and quartz etch​
  • Si etch
  • SiO2 and SiNx hard mask etch
InP SEM ICP Etched
InLens SEM ICP Etched
Metal Masked fused silica SEMS
VCSEL Mesa SEM

Wafer size: up to 200 mm

ICP source sizes available: 65mm and 300mm

Temperature range: From -150 up to 400 °C​

Cluster with: up to 5 modules including technologies such as ALD, PECVD, Ion Beam Etch and Ion Beam Deposition

PlasmaPro 100 Brochure
Webinar: Plasma Processes for InP Devices
White Paper: InP laser diode device production: DFB Grating Etch
DOWNLOAD BROCHURE

Case Study

We had a highly informative conversation with two researchers from the University of Glasgow who have shared their innovative projects that take place at the state‑of‑the‑art James Watt Nanofabrication Centre (JWNC) cleanroom within the university.

Dr Jharna Paul and Valentino Seferai use the Oxford Instruments PlasmaPro® 100 Cobra ICP RIE system for the fabrication of superconducting qubits.

"We use Oxford Instruments PlasmaPro 100 Cobra ICP etching system, as you can effectively control the plasma, the power, the gas delivery, the chamber pressure and the substrate temperature." Dr Jharna Paul, Research Associate at the University of Glasgow

Global Customer Support

Oxford Instruments is committed to providing a comprehensive, flexible and reliable global customer support. We offer excellent quality service throughout the life of your system.

  • Remote diagnostics software provides quick and easy fault diagnosis and resolution.
  • Support contracts are available to suit the budget and situation.
  • Global spares in strategic locations for quick response.
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NEW: PTIQ Software

PTIQ is the latest intelligent software solution for PlasmaPro and Ionfab processing equipment.

  • Exceptional level of responsive system control
  • Optimise system and process performance
  • Different levels of software to suit your requirements
  • Brand new intuitive layout and design
FIND OUT MORE

Options

Other PlasmaPro 100 Systems include:

PlasmaPro 100 RIE

  • The RIE modules deliver anisotropic dry etching for an extensive range of processes.

PlasmaPro 100 ICPCVD

  • The ICP CVD process module is designed to produce high quality films from room temperature to 400°C with high density plasmas at low deposition pressures and temperatures.

PlasmaPro 100 PECVD

  • The PECVD process modules are specifically designed to produce excellent uniformity and high rate films, with control of film properties such as refractive index, stress, electrical characteristics and wet chemical etch rate.

Upgrades/Accessories

Gas pod - incorporate extra gas lines and allow greater flexibility

Logviewer software - datalogging software allows realtime graphing and post run analysis

Optical end point detectors - an important tool for achieving optimal process results

Soft pump - allows the slow pumping down of a vacuum chamber

Turbomolecular vacuum pump - offers superior pumping speeds and higher throughput

X20 Control System - delivers a future proof, flexible and reliable tool with increased system ‘intellect’

Advanced Energy Paramount generator - Offering increased reliability and greater plasma stability

Automatic pressure control - This controller ensures very fast and accurate pressure control

Dual CM gauge switching - provides the ability to utilise two differing ranges of capacitance manometer via a single pressure control valve

LN2 autochangeover unit - enables table cooling fluid to be automatically switched between Liquid Nitrogen (LN2) and Chiller Fluid

TEOS liquid level sensing - level sensing is achieved using ultra sonic level sensors fitted to the TEOS canister

Wide temperature range electrode - significant design improvements to increase process performance

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