Inductively Coupled Plasma Etching (ICP RIE)

ICP RIE etching is an advanced technique designed to deliver high etch rates, high selectivity and low damage processing. Excellent profile control is also provided as the plasma can be maintained at low pressures.

The Cobra^® ICP sources produce a uniform, high density plasma with the capability to operate at low pressures. Substrate DC bias is independently controlled by a seperate RF generator, allowing control of ion energy giving excellent results tailored to specific process requirements.

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Case Study

Diagram of ICP etching system technology

Key Benefits

Unique wide temperature range electrode from -150ºC to +400ºC, range of process solutions across an extensive variety of materials and devices
High etch rates achieved by high ion density (>1011 cm3) and high radical density
Source designed for excellent cross wafer uniformity
Control over selectivity and damage achieved by low ion energy
Excellent profile control with high density of reactive species at low pressure processing
Independent control of the ion energy through separate substrate DC bias control

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Hardware

	PlasmaPro 80	PlasmaPro 100	PlasmaPro Polaris
Electrode size	240mm
Loading	Open load	Load lock or Cassette	Load lock or Cassette
Wafer size	Up to 50mm (2")*	Up to 200mm	Up to 200mm
MFC controlled gas lines	8 or 12 line gas box available	3-5 close coupled gas lines with options for 8-12 external	8 or 12 line gas box available
Wafer stage temperature range	-150 to 400ºC

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Applications

GaN etch for LEDs or lasers and power devices
Vertical Indium Phosphide (InP) waveguides with smooth etch surfaces
Non-selective GaAs/AlGaAs, achieving smooth sidewalls for VCSEL
Precise VCSEL mesa etching with excellent etch depth control
Highly selective GaAs/AlGaAs for optoelectronics
Oxide etching for waveguides
Failure Analysis Applications, removing:
- isotropic polyimide and isotropic nitride (passivation),
- anisotropic Oxide (IMD/ILD)
- Low-K Oxide
- Al and Cu
- Backside Bulk Si

Features

Separate RF and ICP generators provide separate control over ion energy and ion density, enabling high process flexibility
Chemical and ion-induced etching
Can also be run in RIE mode for certain low etch rate applications

Can be used for deposition in ICP-CVD mode
High conductance pumping port provides high gas throughput for fastest etch rates
Electrostatic shield eliminates capacitive coupling, reduces electrical damage to devices, reduces chamber particles
Wafer clamping and helium cooling as standard, providing excellent temperature control with the option of a wide temperature range