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PlasmaPro 100 Cobra

The PlasmaPro 100 range of etch and deposition tools can be fitted with a variety of substrate electrodes, enabling processes over a wide temperature range. They offer a 200mm platform with single wafer and multi-wafer batch capability. The process modules offer excellent uniformity, high throughput and high precision processes.

  • Wide temperature range electrode, -150°C to 400°C

  • Compatible with all wafer sizes up to 200mm
  • Rapid change between wafer sizes
  • Low cost of ownership and ease of serviceability
  • Compact footprint, flexible layout
  • In-situ chamber cleaning and end-pointing


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Our tools are well proven, with over 90% uptime and processes that are guaranteed to ensure rapid start-up during installation. The PlasmaPro 100 range supports a number of markets including but not limited to; MEMS & Sensors, Optoelectronics, Discrete Devices and Nanotechnology. It is flexible enough to be used in research and development, with the build quality to satisfy production needs.

Oxford Instruments’ PlasmaPro 100 process modules offer a 200mm platform with single wafer and multi-wafer batch capability. The process modules offer excellent uniformity, high throughput and high precision processes.

Delivers reactive species to the substrate, with a uniform high conductance path through the chamber - Allows a high gas flow to be used while maintaining low pressure

Variable height electrode - Utilises the 3-dimensional characteristics of the plasma and accommodate substrates up to 10mm thick at optimum height

Wide temperature range electrode (-150°C to +400°C) which can be cooled by liquid nitrogen, a fluid re-circulating chiller or resistively heated - An optional blow out and fluid exchange unit can automate the process of switching modes

A fluid controlled electrode fed by a re-circulating chiller unit - Excellent substrate temperature control

RF powered showerhead with optimised gas delivery - Provides uniform plasma processing with LF/RF switching allowing precise control of film stress

ICP source sizes of 65mm, 180mm, 300mm - Delivers process uniformity up to 200mm wafers

High pumping capacity - Gives wide process pressure window

Wafer clamping with He backside cooling - Optimum wafer temperature control

  • III-V etch processes
  • Solid State Lasers InP etch
  • VCSEL GaAs/AlGaAs etch
  • RF device low damage GaN etch
  • Silicon Bosch and cryo-etch processes
  • Diamond Like Carbon (DLC) deposition
  • SiO2 and quartz etch
  • Failure analysis dry etch de-processing using the specially-configured PlasmaPro FA tools ranging from packaged chip and die etch through to full 200mm wafer etch
  • High quality PECVD of silicon nitride and silicon dioxide for photonics, dielectric layers, passivation and many other uses
  • Hard mask deposition and etch for high brightness LED production
Download PlasmaPro 100 brochure

Options

Other PlasmaPro 100 Systems include:

PlasmaPro 100 RIE

  • The RIE modules deliver anisotropic dry etching for an extensive range of processes.

PlasmaPro 100 ICPCVD

  • The ICP CVD process module is designed to produce high quality films from room temperature to 400°C with high density plasmas at low deposition pressures and temperatures.

PlasmaPro 100 PECVD

  • The PECVD process modules are specifically designed to produce excellent uniformity and high rate films, with control of film properties such as refractive index, stress, electrical characteristics and wet chemical etch rate.

Upgrades/Accessories

Gas pod - incorporate extra gas lines and allow greater flexibility

Logviewer software - datalogging software allows realtime graphing and post run analysis

Optical end point detectors - an important tool for achieving optimal process results

Soft pump - allows the slow pumping down of a vacuum chamber

Turbomolecular vacuum pump - offers superior pumping speeds and higher throughput

X20 Control System - delivers a future proof, flexible and reliable tool with increased system ‘intellect’

Advanced Energy Paramount generator - Offering increased reliability and greater plasma stability

Automatic pressure control - This controller ensures very fast and accurate pressure control

Dual CM gauge switching - provides the ability to utilise two differing ranges of capacitance manometer via a single pressure control valve

LN2 autochangeover unit - enables table cooling fluid to be automatically switched between Liquid Nitrogen (LN2) and Chiller Fluid

TEOS liquid level sensing - level sensing is achieved using ultra sonic level sensors fitted to the TEOS canister

Wide temperature range electrode - significant design improvements to increase process performance

Related Applications

FabricationQuantum Information ProcessingBioMEMS Fabrication

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