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Silicon Carbide & Gallium Nitride Power Devices

Efficient power switching and conversion devices are used to make possible new technologies such as electric cars and local power creation and distribution networks.

Advances in device performance through use of materials such as SiC and GaN means lower energy losses. Oxford Instruments has a deep understanding of how to make the most optimised devices through its process solutions such as atomic layer deposition, plasma etching and plasma deposition.


Power Device Solutions

  • Our Atomic Layer Deposition (ALD) processes provide excellent passivation of GaN/AlGaN reducing threshold voltage shift
  • Atomfab is our latest innovation in ALD technology, designed specifically for GaN and RF device manufacturing.
  • Our GaN etch processes are optimised to reduce plasma damage and produce smooth etched profiles
  • Etch rates can be tuned to just a few nm/min for ultra low damage and controlled etch of just 10-30nm of AlGaN
  • SiC via etch achieves high rate with excellent sidewall quality
  • SiC feature etch shows smooth etch surfaces for optimal device performance

Fabrication Process for SiC & GaN

Simplified process flow. Orange processes show solutions covered by Oxford Instruments' technology.

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Atomfab is our latest innovation in ALD system technology, delivering fast pace, low damage, low CoO production plasma ALD processing for GaN power and RF devices.

  • Excellent film uniformity
  • Low substrate damage
  • Competitive CoO
SiC hole etch SEM image

SiC hole etch SEM image

SiC hole etch close-up SEM image

SiC hole etch close-up SEM image

Smooth and vertical SiC feature etch

Smooth and vertical SiC feature etch

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