Atomfab is our latest innovation in ALD system technology, delivering fast pace, low damage, low CoO production plasma ALD processing for GaN power and RF devices.
SiC hole etch SEM image
SiC hole etch close-up SEM image
Smooth and vertical SiC feature etch
In this white paper, we consider the role of plasma processing and its importance in defining device performance and optimal strategies for the application. We also examine the structure of primary SiC devices such as Schottky barrier diodes (SBDs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs).
In this webinar, we presents the top 5 ways plasma processing can be used to enhance SiC device performance. We look at surface preparation using plasma etching; mask deposition using PECVD; high etch-rate etching of mesas and trenches; depostion of barrier layers to improve interfaces and efficiency, and more.