RIE and ALE Processes for Quantum Devices
Reactive Ion Etching Plasma Enhanced (RIE-PE) combines two simple plasma generation techniques on one tool.
With RIE, more directional etching and faster rates are achieved as the surface the sample sits on has an accelerating voltage attracting ions from the plasma. PE has no accelerating voltage and more isotropic etching takes place.
|Substrates||See product brochure|
|MFC controlled gaslines||4,8 or 12 line gas box available|
|Wafer stage temperature range||-150ºC to 400ºC|
|He Back side cooling option||Yes|