Designed specifically for the harsh chemistries required for etching tough materials such as GaN, Sapphire and SiC, the PlasmaPro 100 Polaris delivers fast etch rates uniformly on wafers up to 200mm diameter.
The PlasmaPro 100 Polaris single wafer etch system offers smart solutions to produce the etch results you need to maintain your competitive edge.
Actively cooled electrode - Maintains sample temperature during etch process
High power ICP source - Produces high density plasmas
Reliable hardware and ease of serviceability - Excellent uptime
Magnetic spacer - Enhanced ion control and uniformity
Exclusive electrostatic clamp technology - Capable of clamping sapphire, GaN on sapphire and silicon
Heated chamber liners - Optimised to reduce chamber wall deposition
Advanced auto matching unit (AMU) - Allows fast, efficient and accurate matching, enabling excellent process repeatability