ICP etch is a widely used technique to deliver high etch rates, high selectivity and low damage processing. Excellent profile control is also provided as the plasma can be maintained at low pressures. The Cobra® ICP etch sources produce a high density of reactive species at low pressure. Substrate DC bias is independently controlled by an RF generator, allowing control of ion energy according to process requirements.
||PlasmaPro 100||PlasmaPro Estrelas||PlasmaPro Polaris|
||Load lock or Cassette|
|Wafer size||Up to 50mm (2")*||Up to 200mm|
|MFC controlled gas lines||8 or 12 line gas box available||3-5 close coupled gas lines with options for 8-12 external||8 or 12 line gas box available|
|Wafer stage temperature range||-150 to 400ºC|