Ion beam technology provides an exceptionally versatile approach to etching by offering a single tool and maximising system utilisation. Ion beam etch offers maximum flexibility coupled with excellent uniformity.
Ion Beam Etching (or milling) is achieved by directing a beam of charged particles (ions) at a substrate with a suitably patterned mask in a high vacuum chamber. It enables highly-directional beams of neutral ions to control over the sidewall profile as well as radial uniformity optimisation and feature shaping during nanopatterning.
Tilted features can be created by the unique ability to tilt the sample altering the direction of impact of the ion beam.
Our ion beam system, Ionfab, can be configured for etching (IBE) as well as deposition (IBD) technologies.
CAIBE GaAs using a
SiO2 slated gratings for AR applications.
|Metals||Au, Ag, Pt, Cu, Al|
|Magnetics/Alloys||MnIr, CoFe, FeMn, NiCr|
|Refractory oxides||MgO, SiO<sub>2</sub>|
|III-Vs||InGaAsP, InSb, GaN, GaAs, InP|
|II-VIs||cDtE, cDhGtE, zNo, zNsE|
|Composites and others||SrTiO<sub>3</sub>, LaAlO<sub>3</sub>, LiNbO<sub>3</sub>, Si|
Our ion beam etch (IBE) system is a popular choice for high-quality material processing. Our systems have flexible hardware options including single substrate load lock and cassette to cassette. System specifications are closely tuned to applications, enabling faster and repeatable process results.
As well as our IBE technology, we also offer ion beam deposition (IBD) solutions.
Ion Beam Deposition is a versatile and flexible thin film deposition technique that offers reliable, high quality and high-performance coatings, finding applications notably in infrared devices and high power lasers.
Our Ionfab Ion Beam system is capable of both IBE and IBD technology.