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Powerful CVD Solutions

Discover our industry-leading CVD solutions and systems.

Ion Beam Etching (IBE) Solutions

Atomic Layer Deposition (ALD) is an advanced deposition technique that allows for ultra-thin films of a few nanometres to be deposited in a precisely controlled way. Not only does ALD provide excellent thickness control and uniformity but 3D structures can be covered with a conformal coating for high-aspect-ratio structures.

Key Benefits of IBE

  • Self-limiting atomic layer-by-layer growth
  • Highly-conformal coating
  • Low pin-hole and particle levels
  • High-quality oxides with low damage
  •  Low-temperature process for sensitive substrates
  • Metals with low nucleation delay
  • Wide range of materials and processes

 

Applications

  • Quantum Technology
  • 2D Materials
  • GaN Power
  • Biomedical Devices

 

Processes

  • Quantum Technology
  • 2D Materials
  • GaN Power
  • Biomedical Devices
ALD SiO2 SEM

Conformal coating of high aspect ratio (15:1) structure with high-rate plasma ALD SiO2.

ALD AL2O3 SEM

80 nm remote plasma ALD Al2O3 film in 2.5 mm wide trenches with aspect ratio ~10, deposited with FlexAL.


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Ionfab IBE System

The FlexAL atomic layer deposition (ALD) system offers a broad range of optimised high-quality plasma ALD and thermal ALD processes with maximum flexibility in precursors, processes gases, and hardware configuration within a single process chamber.

  • RF biased electrode option available for control of film properties

  • Industry-standard cassette to cassette handling for higher throughput

  • Maximum flexibility in the choice of precursors, process gases, hardware features and options

  • Optimised to maintain low-damage, high-quality substrates

  • Low temperature to enable high-quality deposition on temperature-sensitive surfaces

Ion Beam Deposition (IBD) Solutions

Atomic Layer Etching (ALE) is an advanced etch technique that allows for excellent depth control on shallow features. As device feature size reduces further and further ALE is required to achieve the accuracy required for peak performance.

  • Point A
  • Point B
  • Point C
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Applications for Ion Beam Etching


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