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Following our exciting new partnership with Rohm Semiconductor, we will discuss the latest technology advancements for GaN.
GaN is projected to be a $1b market by 2030 and is a critical enabling technology in some very high growth markets like automated vehicles and datacentres.
There are two routes to achieving more efficient, higher operating temperature, smaller, lighter and lower cost power semiconductors – pGaN HEMTs and also GaN MISHEMTs.
In this webinar, Dr Aileen O'Mahony will focus on atomic layer processing solutions to create both of these next-generation GaN Power devices. She will discuss the newest developments for our atomic layer deposition low damage, high-quality dielectrics and passivation layers, and share our technology solutions for accurate, controlled atomic layer etch for pGaN HEMTs and GaN MISHEMTs.
Dr. Aileen O’Mahony has a PhD in Chemistry from University College Cork in the field of Atomic Layer Deposition (ALD) for microelectronics applications. Aileen has worked in the US and UK on industry-driven process development for the commercialisation of ALD-functionalised products.
She is now focused on advancing Atomic Scale Processing product solutions. She is the author and co-author of 20+ publications and has presented at numerous international conferences.
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