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Do You Have The Best Gate Dielectric For Your GaN Device?

11 July 2019 at 3PM (BST)

About the Webinar

New GaN power electronics are being developed for power conversion and delivery. In electric transportation such as electric and hybrid electric vehicles (EV and HEV), these devices are becoming increasingly important and device cost and efficiencies are critical for their success.

In this webinar, Dr Aileen O'Mahony talks about the best ALD solutions for GaN HEMT devices. We'll demonstrate how to achieve the high film quality and low interface defect density needed to provide the best GaN device performance and how to achieve the following:

  • Excellent film uniformity
  • Optimised process conditions for low substrate damage
  • High material quality for superior device performance
  • Conformal deposition

Meet the Presenter

Dr. Aileen O’Mahony

Dr. Aileen O’Mahony
Atomic Scale Processing Product Manager, Oxford Instruments Plasma Technology

Dr. Aileen O’Mahony has a PhD in Chemistry from University College Cork in the field of Atomic Layer Deposition (ALD) for microelectronics applications. Aileen has worked in the US and UK on industry-driven process development for the commercialisation of ALD-functionalised products.

She is now focused on advancing Atomic Scale Processing product solutions. She is the author and co-author of 20+ publications and has presented at numerous international conferences.


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