Part of the Oxford Instruments Group
Expand
WEBINAR
DO YOU HAVE THE BEST GATE DIELECTRIC FOR YOUR GaN DEVICE?

ON DEMAND NOW AVAILABLE

New GaN power electronics are being developed for power conversion and delivery. In electric transportation such as electric and hybrid electric vehicles (EV and HEV), these devices are becoming increasingly important and device cost and efficiencies are critical for their success.

Join Dr Aileen O'Mahony to hear about the best ALD solutions for GaN HEMT devices. In this webinar, Dr O'Mahony discusses how to achieve the high film quality and low interface defect density needed to provide the best GaN device performance and how to achieve the following:

  • Excellent film uniformity
  • Optimised process conditions for low substrate damage
  • High material quality for superior device performance
  • Conformal deposition
GaN HEMT

MEET THE PRESENTER

Dr. Aileen O’Mahony

Dr. Aileen O’Mahony is the Atomic Scale Processing Product Manager at Oxford Instruments Plasma Technology. Aileen has a PhD in Chemistry from University College Cork in the field of Atomic Layer Deposition (ALD) for microelectronics applications. Aileen has worked in the US and UK on industry-driven process development for the commercialisation of ALD-functionalised products and is now focused on advancing Atomic Scale Processing product solutions. She is the author and co-author of 20+ publications, and has presented at numerous international conferences.

WATCH RECORDING