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Reactive Ion Etch (RIE)

RIE is a simple operation and an economical solution for general plasma etching. A single RF plasma source determines both ion density and energy.

RIE

Highlights

Multiple choices of etch processes:

  • Chemical etch – isotropic, fast rate
  • Ion induced etch – anisotropic, medium rate
  • Physical etch – anisotropic, slow rate
  • Wide applications in semiconductor de-processing and failure analysis
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RIE features:

  • Solid state RF generators and close coupled matching network for fast and consistent etching
  • Full area process gas inlet showerhead for uniform gas distribution
  • Electrodes for temperatures from -150ºC to +400ºC
  • High pumping capacity gives wide process pressure window
  • Wafer clamping with He backside cooling is available for optimum wafer temperature control

A wide range of materials can be etched, including:

  • Dielectric materials (SiO2, SiNx, etc.)
  • Silicon-based materials (Si, a-Si, poly-Si)
  • III-V materials (GaAs, InP, GaN, etc.)
  • Sputtered metals (Au, Pt, Ti, Ta, W, etc.)
  • Diamond-like carbon (DLC)
PlasmaPro 80
PlasmaPro 800
PlasmaPro 100
Electrode size 240mm 460mm 240mm
Loading Open load
Load locked or cassette
Substrates Up to 240mm
Up to 460mm
200mm with carriers options available for multi-wafers or small pieces
MFC controlled gaslines 8 or 12 line gas box available
Wafer stage temperature range -150°C to 400°C
10°C to 80°C -150°C to 400°C
He Back side cooling option Yes No Yes
ICP Option Yes No Yes
Focused Plasma Yes No
Download PlasmaPro 80 Brochure
Download PlasmaPro 100 Brochure
Download PlasmaPro 800 Brochure

RIE Systems