Reactive Ion Etching (RIE)

Reactive Ion Etching (or RIE) is a simple operation and an economical solution for general plasma etching. A single RF plasma source determines both ion density and energy.

Highlights

Multiple choices of etch processes:

Chemical etching – isotropic, fast rate
Ion induced etching – anisotropic, medium rate
Physical etching – anisotropic, slow rate
Wide applications in semiconductor de-processing and failure analysis

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Features & benefits
Hardware

RIE features:

Solid state RF generators and close coupled matching network for fast and consistent etching
Full area process gas inlet showerhead for uniform gas distribution
Electrodes for temperatures from -150ºC to +400ºC
High pumping capacity gives wide process pressure window
Wafer clamping with He backside cooling is available for optimum wafer temperature control

A wide range of materials can be etched, including:

Dielectric materials (SiO₂, SiN_x, etc.)
Silicon-based materials (Si, a-Si, poly-Si)
III-V materials (GaAs, InP, GaN, etc.)
Sputtered metals (Au, Pt, Ti, Ta, W, etc.)
Diamond-like carbon (DLC)

	PlasmaPro 80	PlasmaPro 800	PlasmaPro 100
Electrode size	240mm	460mm	240mm
Loading	Open load		Load locked or cassette
Substrates	Up to 240mm	Up to 460mm	200mm with carriers options available for multi-wafers or small pieces
MFC controlled gaslines	8 or 12 line gas box available
Wafer stage temperature range	-150°C to 400°C	10°C to 80°C	-150°C to 400°C
He Back side cooling option	Yes	No	Yes
ICP Option	Yes	No	Yes
Focused Plasma	Yes		No

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RIE Systems

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