Reactive Ion Etching (RIE)

RIE features:

• Solid state RF generators and close coupled matching network for fast and consistent etching
• Full area process gas inlet showerhead for uniform gas distribution
• Electrodes for temperatures from -150ºC to +400ºC
• High pumping capacity gives wide process pressure window
• Wafer clamping with He backside cooling is available for optimum wafer temperature control

A wide range of materials can be etched, including:

• Dielectric materials (SiO₂, SiN_x, etc.)
• Silicon-based materials (Si, a-Si, poly-Si)
• III-V materials (GaAs, InP, GaN, etc.)
• Sputtered metals (Au, Pt, Ti, Ta, W, etc.)
• Diamond-like carbon (DLC)