Inductively Coupled Plasma Etching (ICP RIE)

Applications

• GaN etch for LEDs or lasers and power devices
• Vertical Indium Phosphide (InP) waveguides with smooth etch surfaces
• Non-selective GaAs/AlGaAs, achieving smooth sidewalls for VCSEL
• Precise VCSEL mesa etching with excellent etch depth control
• Highly selective GaAs/AlGaAs for optoelectronics
• Oxide etching for waveguides
• Failure Analysis Applications, removing:
  • isotropic polyimide and isotropic nitride (passivation),
  • anisotropic Oxide (IMD/ILD)
  • Low-K Oxide
  • Al and Cu
  • Backside Bulk Si

Features

• Separate RF and ICP generators provide separate control over ion energy and ion density, enabling high process flexibility
• Chemical and ion-induced etching
• Can also be run in RIE mode for certain low etch rate applications

• Can be used for deposition in ICP-CVD mode
• High conductance pumping port provides high gas throughput for fastest etch rates
• Electrostatic shield eliminates capacitive coupling, reduces electrical damage to devices, reduces chamber particles
• Wafer clamping and helium cooling as standard, providing excellent temperature control with the option of a wide temperature range