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Hafnium Dioxide 

Hafnium Dioxide HfO2 is a high-k dielectric used for the gate insulator in advanced integrated circuits. HfO2 may be deposited using the following process types: Atomic Layer Deposition (ALD) and Reactive Ion Beam Deposition (RIBD)

High material quality and low damage, even at low deposition temperature.

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Process expertise applied to demonstrate competitive results with excellent repeatability.

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