Part of the Oxford Instruments Group

Thank You for Registering!


You have successfully registered for our How to Plasma Etch Silicon Carbide to Achieve Maximum Device Performance webinar.

We look forward to seeing you on the 7 May at 3PM (UK).


Plasma Processing Solutions for Manufacturing SiC Power Devices

In this white paper, we consider the role of plasma processing and its importance in defining SiC device performance and optimal strategies for the application.

We also examine the structure of primary SiC devices such as:

  • Schottky barrier diodes (SBDs); and
  • Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). 

Read & download today for free.


Related Content