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Atomic Layer Deposition (ALD) is an advanced deposition technique that allows for ultra-thin films of a few nanometres to be deposited in a precisely controlled way. Not only does ALD provide excellent thickness control and uniformity but 3D structures can be covered with a conformal coating for high-aspect-ratio structures.
In addition to the benefits of thermal ALD, plasma ALD allows for a wider choice of precursor chemistry with enhanced film quality. It offers:
Find out more about the atomic layer deposition process >
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Conformal coating of high aspect ratio (15:1) structure with high-rate plasma ALD SiO2.
80 nm remote plasma ALD Al2O3 film in 2.5 mm wide trenches with aspect ratio ~10, deposited with FlexAL.
ALD processing chamber.
The FlexAL atomic layer deposition (ALD) system offers a broad range of optimised high-quality plasma ALD and thermal ALD processes with maximum flexibility in precursors, processes gases, and hardware configuration within a single process chamber.
RF biased electrode option available for control of film properties
Industry-standard cassette to cassette handling for higher throughput
Maximum flexibility in the choice of precursors, process gases, hardware features and options
Optimised to maintain low-damage, high-quality substrates
Specifically designed for high-volume manufacturing, Atomfab delivers fast, low damage, low CoO production plasma ALD processing for GaN power and RF devices.
Atomfab offers precisely controlled ultra‑thin films for advanced applications on the nanometre scale, with conformal coating of sensitive substrates structures.
Atomic Layer Etching (ALE) is an advanced etch technique that allows for excellent depth control on shallow features. As device feature size reduces further and further ALE is required to achieve the accuracy required for peak performance.
Plasma-based atomic layer etching is a cyclical etching process of gas dosing and ion bombardment that removes material layer by layer and has the potential to remove single atomic layers with very low damage.
Find out more about the atomic layer etching process >
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25nm wide Si trenches etched to 110nm depth by ALE,
HSQ mask still in place.
The PlasmaPro 100 ALE delivers precise process control of etching for next-generation semiconductor devices.
Specially designed for processes such as recess etching for GaN HEMT applications and nanoscale layer etching, the system's digital/cyclical etch process offers low damage, smooth surfaces.
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