The Cobra® ICP etching sources produce a high density of reactive species at low pressure. Substrate DC bias is independently controlled by an RF generator, allowing control of ion energy according to process requirements.
The PlasmaPro 100 Cobra ICP RIE system utilises a high-density inductively coupled plasma to achieve fast etch rates. The process modules offer excellent uniformity, high-throughput,…
The PlasmaPro 80 ICP RIE is a compact, small footprint system offering versatile ICP etch solutions with convenient open loading. It is easy to site and easy to use, with no compromise…