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Part of the Oxford Instruments Group
Silicon Nitride (SiNx) is widely used in the semiconductor industry. It's applications include device passivation and etch masks. Si3N4 can be deposited using the following techniques:
Good uniformity and profile with low damage.
Anisotropic and isotropic profile available at competitive etching rate with optimised uniformity.
Competitive etching rate, selectivity and profile.
Silicon nitride is known to be a challenging material for ALD. Our systems allow for high material quality and low damage deposition, even at low deposition temperature. ALD silicon nitride can be used for moisture barrier applications and as a spacer in advanced transistors.
High material quality and low damage, even at low deposition temperature.
Different chemistries can be used: pure and diluted silane
High quality films with low BOE
Excellent film thickness uniformity
Low hydrogen content with NH3 free process
Film stress control
Refractive index control
Low temperature deposition down to 20°C
Deposition rates from 5-100nm/min
Different chemistries can be used: pure and diluted silane
High quality films with low BOE
Excellent film thickness uniformity
Low hydrogen content with NH3 free process
Film stress control
Refractive index control
Deposition rates from 5-500nm/min
Excellent stoichiometry with competitive deposition rate and controlled stress.
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