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Dr Uwe Schroeder and Dr Harm Knoops will discuss the ALD of ferroelectric HfO2 for novel memory applications and the tuning properties of TiO2 and HfO2 by substrate biasing during Plasma ALD.
Dr Harm Knoops is the Atomic Scale Segment Specialist at Oxford Instruments Plasma Technology and holds a part-time assistant professorship position at the Eindhoven University of Technology. His current work covers the fields of (plasma-based) synthesis of thin films, advanced diagnostics and understanding and developing plasma ALD.
His main goals are to improve and advance atomic scale processes and applications for Oxford Instruments and its customers. His recent involvement in applying RF substrate biasing during plasma ALD and the growth of 2D-MoS2 by plasma ALD have been well-received by the field.
Daniel obtained his PhD in Physics from the University of Regensburg in 2009. In the same year, he joined AMO GmbH and become the head of the graphene group, focusing on the exploitation of two-dimensional materials for electronic photonic and sensor applications. His expertise falls in the field of semiconductor processing, solid-state electronics and optoelectronic devices. He is the leader of the work-package on Electronic Devices of the Graphene Flagship (since 2013) and is coordinating the FET Open Project ORIGENAL.
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