Oxford Instruments, a leading provider of advanced plasma processing solutions,…
PECVD is a well established technique for deposition of a wide variety of films. Many types of device require PECVD to create high quality passivation or high density masks.
Our PECVD Systems are specifically designed to produce excellent uniformity and high rate films, with control of film properties such as refractive index, stress, electrical characteristics and wet chemical etch rate. Our plasma cleaning process with end-point control removes or reduces the need for physical/chemical chamber cleaning.
PECVD of TEOS SiO2
PECVD of vertically aligned graphene (Courtesy of IMEC, Belgium)
The PlasmaPro 100 PECVD system is specifically designed to produce high quality films with excellent uniformity and control of film properties such as refractive index, stress, electrical characteristics and wet chemical etch rate. Our cutting-edge Plasma Enhanced CVD system is suitable for dielectric films passivation (e.g. SiO2, SixNy), silicon carbide, amorphous silicon, hard mask deposition and anti-reflective coatings.
PlasmaPro 100 PECVD delivers excellent conformal deposition and low particle generation due to electrode temperature uniformity and shower head design in the electrode, allowing RF energy to produce the plasma.
The high energy reactive species of plasma offers high deposition rates to achieve the desired thickness of the substrate while maintaining low pressure. Its dual frequency 13.56MHz and 100KHz power applied to upper electrode enables stress control and film densification.
High rate SiO2 PECVD
High rate SiO2 PECVD
Clustering of up to 4 process modules
Resistive heated electrodes: up to 400°C or 1200°C
Precursor delivery option:
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Gas pod - incorporate extra gas lines and allow greater flexibility
Logviewer software - datalogging software allows realtime graphing and post run analysis
Optical end point detectors - an important tool for achieving optimal process results
Soft pump - allows the slow pumping down of a vacuum chamber
Turbomolecular vacuum pump - offers superior pumping speeds and higher throughput
X20 Control System - delivers a future proof, flexible and reliable tool with increased system ‘intellect’
Advanced Energy Paramount generator - Offering increased reliability and greater plasma stability
Automatic pressure control - This controller ensures very fast and accurate pressure control
Dual CM gauge switching - provides the ability to utilise two differing ranges of capacitance manometer via a single pressure control valve
LN2 autochangeover unit - enables table cooling fluid to be automatically switched between Liquid Nitrogen (LN2) and Chiller Fluid
Wide temperature range electrode - significant design improvements to increase process performance