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Plasma Enhanced Chemical Vapour Deposition (PECVD)

Specifically designed to produce excellent uniformity and high rate films

PlasmaPro 100 PECVD

Delivering excellent conformal deposition and low particle generation


Plasma Enhanced Chemical Vapour Deposition (PECVD)


  • Top electrode RF driven (MHz and/or kHz); no RF bias on lower (substrate) electrode
  • Substrate sits directly on heated electrode
  • Gas injected into process chamber via “showerhead” gas inlet in the top electrode
  • Film stress can be controlled by high/low frequency mixing techniques
  • Lower temperature processes compared to conventional CVD
  • Control over film stoichiometry via process conditions


PECVD Overview


PECVD is a well established technique for deposition of a wide variety of films. Many types of device require PECVD to create high quality passivation or high density masks.

Our PECVD Systems are specifically designed to produce excellent uniformity and high rate films, with control of film properties such as refractive index, stress, electrical characteristics and wet chemical etch rate. Our plasma cleaning process with end-point control removes or reduces the need for physical/chemical chamber cleaning.

PECVD of TEOS SiO2

PECVD of TEOS SiO2

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Applications for PECVD


  • High quality PECVD of silicon nitride and silicon dioxide for photonics, dielectric layers, passivation and many other uses
  • High quality SiOx, SiNx and SiOxNy deposition for a wide range of applications
  • Hard mask deposition and etch for high brightness LED production
  • Amorphous silicon (a-Si:H)
  • TEOS SiO2 with conformal step coverage, or void-free films and conformal step coverage
  • VCSEL manufacturing
PECVD of vertically aligned graphene (Courtesy of IMEC, Belgium)

PECVD of vertically aligned graphene (Courtesy of IMEC, Belgium)

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Featured PECVD products



PlasmaPro 100 PECVD


The PlasmaPro 100 PECVD system is specifically designed to produce high quality films with excellent uniformity and control of film properties such as refractive index, stress, electrical characteristics and wet chemical etch rate. Our cutting-edge Plasma Enhanced CVD system is suitable for dielectric films passivation (e.g. SiO2, SixNy), silicon carbide, amorphous silicon, hard mask deposition and anti-reflective coatings.

  • High quality films, high throughput, excellent uniformity
  • High density plasma and low pressure deposition
  • Excellent control of refractive index and stress
  • Compatible with wafer sizes up to 200mm
  • Rapid change between wafer sizes
  • Low cost of ownership and ease of serviceability
  • Resistive heated electrodes with capability up from 400°C to 1200°C
  • In-situ chamber cleaning and end-pointing


Overview of PlasmaPro 100 PECVD


PlasmaPro 100 PECVD delivers excellent conformal deposition and low particle generation due to electrode temperature uniformity and shower head design in the electrode, allowing RF energy to produce the plasma. 

The high energy reactive species of plasma offers high deposition rates to achieve the desired thickness of the substrate while maintaining low pressure. Its dual frequency 13.56MHz and 100KHz power applied to upper electrode enables stress control and film densification.



Features of PlasmaPro 100 PECVD


  • Delivers reactive species to the substrate, with a uniform high conductance path through the chamber allows a high gas flow to be used while maintaining low pressure
  • RF powered showerhead with optimised gas delivery provides uniform plasma processing with LF/RF switching allowing precise control of film stress
  • High pumping capacity gives wide process pressure window


Applications for PlasmaPro 100 PECVD


  • High quality PECVD of silicon nitride and silicon dioxide for photonics, dielectric layers, passivation and many other uses
  • Silicon Carbide (SiC)
  • Amorphous silicon (a-Si:H) and poly-Si
  • Hard mask deposition and etch for high brightness LED production

High rate SiO2 PECVD

High rate SiO2 PECVD



Specifications of PlasmaPro 100 PECVD


Clustering of up to 4 process modules

Resistive heated electrodes: up to 400°C or 1200°C

Precursor delivery option:

  • Liquid or solid precursors
  • Can be heated up to 70°C
  • Vapour draw, carrier gas assist or bubbling modes
  • Uses standard canisters from all major precursor suppliers

Global customer support

Oxford Instruments is committed to providing a comprehensive, flexible and reliable global customer support. We offer excellent quality service throughout the life of your system.

  • Remote diagnostics software provides quick and easy fault diagnosis and resolution.
  • Support contracts are available to suit the budget and situation.
  • Global spares in strategic locations for quick response.
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NEW: PTIQ software

PTIQ is the latest intelligent software solution for PlasmaPro and Ionfab processing equipment.

  • Exceptional level of responsive system control
  • Optimise system and process performance
  • Different levels of software to suit your requirements
  • Brand new intuitive layout and design
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Explore our comprehensive Training Training courses

At Oxford Instruments Plasma Technology, we offer a wide range of technical training courses designed to suit all skill levels and needs.

  • Level 1 (Introductory): New system users for all platforms
  • Level 2 (Intermediate): Equipment and maintenance training for all platforms
  • Level 3 (Advanced): for Plasma, Ion Beam and ALD systems
  • Specialist Technical Modules: process and handler technical training for all platforms
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Upgrades/Accessories

Gas pod - incorporate extra gas lines and allow greater flexibility

Logviewer software - datalogging software allows realtime graphing and post run analysis

Optical end point detectors - an important tool for achieving optimal process results

Soft pump - allows the slow pumping down of a vacuum chamber

Turbomolecular vacuum pump - offers superior pumping speeds and higher throughput

X20 Control System - delivers a future proof, flexible and reliable tool with increased system ‘intellect’

Advanced Energy Paramount generator - Offering increased reliability and greater plasma stability

Automatic pressure control - This controller ensures very fast and accurate pressure control

Dual CM gauge switching - provides the ability to utilise two differing ranges of capacitance manometer via a single pressure control valve

LN2 autochangeover unit - enables table cooling fluid to be automatically switched between Liquid Nitrogen (LN2) and Chiller Fluid

Wide temperature range electrode - significant design improvements to increase process performance

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