Inductively Coupled Plasma Chemical Vapour Deposition (ICPCVD)

Delivers deposition of high quality dielectric films at low temperature with low damage

PlasmaPro 100 ICPCVD

Achieves superior film quality with low substrate damage

Chemical Vapour Deposition (CVD)

CVD is a well-established technique for deposition of a wide variety of films with different compositions and thicknesses down to a single layer of atoms.

Substrate sits directly on electrode which can be heated up to 1200˚C
Gas injected into process chamber via “showerhead” gas inlet in the top electrode
Solid/liquid precursor delivery system for novel processes such as 2D materials MOCVD, ZnO nanowire CVD etc.
Automatic load lock to transfer sample directly on to a hot table and save time on heating and cooling.
Plasma enhancement options for lower temperature deposition or plasma assisted conversion or functionalization as well as chamber cleaning.
Wide range of processes possible in the same chamber
PlasmaPro 100 Nano is a high temperature CVD/PECVD system tailored for high quality deposition of nanostructured materials and Silicon based thin films.

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Features and benefits
Processing

Features and benefits of CVD

Up to 1200˚C table temperature
Direct and remote plasma enhancement options
Operating pressures up to 5 Torr (higher possible)
Dry plasma cleaning process with end-point control removes or reduces need for physical/chemical chamber cleaning
Multiple heated/cooled liquid/solid precursors delivery system in addition to 12 gas delivery lines.
Offers a wide range of material deposition, including:
- Si based PECVD/ICP CVD processes and high temperature CVD processes in the same chamber
- 1D materials growth such as Carbon nanotubes, ZnO nanowires and Si Nanowires
- 2D materials growth such as Graphene, hBN, MoS₂/WS₂ and other transition metal dichalcogenides (TMDCs)

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Processing of CVD

Graphene

This specification is issued for Graphene obtained through CVD processes.

Load-locked system offers higher throughput, as no cooling of the growth chamber is required to exchange samples
He purge gas is required for the process
The presence of Graphene layer(s) will be tested by Raman Spectroscopy peak 2D analysis
1 layer Graphene will be confirmed by Raman Spectroscopy

2D hBN

This specification is issued for Boron Nitride obtained through CVD processes. For the purpose of process demonstration, B₂H₆ is used as Boron source and NH₃ as the Nitrogen sources on Cu/Ni foils as catalyst substrates.

2D MoS₂ and TMDs

We offer PECVD systems equipped with precursor vapour delivery modules for the growth of two-dimensional layers of materials like MoS₂, WS₂ etc.

Excellent thickness control with low defects and strong photoluminescence

High-quality MoS₂:

AFM shows defined step height and smooth uniform film
Raman indicates one mono-layer is deposited with characteristic peaks spaced 21.1cm-¹ apart

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Featured CVD products

PlasmaPro 100 Nano CVD

Chemical Vapour Deposition (CVD) & PECVD tools for growth of 1D/2D nanomaterials and heterostructures. PlasmaPro 100 Nano (formerly Nanofab) delivers high-performance growth of nanomaterials with in-situ catalyst activation and rigorous process control, with flexible temperatures up to 1,200°C.

Excellent uniformity with flexible temperatures up to 1200°C
Options of a 700°C, 800°C or 1200°C table
Sample sizes up to 200mm
Vacuum load lock - Quick sample exchange
Cold wall design with showerhead based uniform precursor delivery
Optional liquid/solid source delivery system for growth of MoS₂,MoSe₂ and other TMDCs

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Features
Applications

Features of the PlasmaPro 100 Nano CVD

Excellent uniformity with flexible temperatures up to 1200°C
Options of a 700°C, 800°C or 1200°C table
Sample sizes up to 200mm
Vacuum load lock - Quick sample exchange
Cold wall design with showerhead based uniform precursor delivery
Optional liquid/solid source delivery system for growth of MoS₂,MoSe₂ and other TMDCs

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Applications for the PlasmaPro 100 Nano CVD

2D materials growth
MoS₂ growth
Graphene growth
hBN growth
1D materials growth
Carbon nano tube (CNT) growth

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Global customer support

Oxford Instruments is committed to providing a comprehensive, flexible and reliable global customer support. We offer excellent quality service throughout the life of your system.

Remote diagnostics software provides quick and easy fault diagnosis and resolution.
Support contracts are available to suit the budget and situation.
Global spares in strategic locations for quick response.

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NEW: PTIQ software

PTIQ is the latest intelligent software solution for PlasmaPro and Ionfab processing equipment.

Exceptional level of responsive system control
Optimise system and process performance
Different levels of software to suit your requirements
Brand new intuitive layout and design

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Explore our comprehensive Training Training courses

At Oxford Instruments Plasma Technology, we offer a wide range of technical training courses designed to suit all skill levels and needs.

Level 1 (Introductory): New system users for all platforms
Level 2 (Intermediate): Equipment and maintenance training for all platforms
Level 3 (Advanced): for Plasma, Ion Beam and ALD systems
Specialist Technical Modules: process and handler technical training for all platforms

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