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Ion beam etching can be applied in two ways: using inert ions for a physical etching or milling process or using RIBE/CAIBE with reactive ion species to increase differential material etch rates with a chemical/reactive component and enhance selectivities.
In Reactive Ion Beam Etching (RIBE) and Chemically Assisted Ion Beam Etching (CAIBE) modes, reactive species are added (CHF3, SF6, N2, O2, etc.) to the source (RIBE) or to the gas ring (CAIBE) to increase volatility of etch products and selectivity to the mask material.
Ion Beam Etching (or Milling with inert gases) is achieved by directing a beam of charged particles (ions) at a substrate with a suitably patterned mask in a high vacuum chamber. It enables highly directional beams of ions – whose space-charge is neutralised by electrons from the neutraliser - to control the etched sidewall profile as well as radial uniformity optimisation and feature shaping during nanopatterning notably using the tilt angle to the beam with on-axis rotation for axisymmetry.
On the other hand, angled features can be created by the unique ability to tilt the sample (without rotation) altering the direction of impact of the ion beam. In both cases, the etch process can be assisted by chemistry (RIBE and CAIBE) using reactive gases to enhance both etch rates and selectivity to a mask.
Our ion beam etch (IBE) & deposition (IBD) system is a popular choice for high-quality material processing. Our systems have flexible hardware options including open load, single substrate load lock, and cassette to cassette. System specifications are closely tuned to applications, enabling faster and repeatable process results.
Multiple mode functionality, etch and deposition in a single chamber
Single wafer load lock or cluster wafer handling
Capable of clustering with other OIPT plasma etch and deposition tools
Unmatched batch uniformity and process reproducibility
Ion beam technology provides an exceptionally versatile approach to etch and deposition by offering a single tool and maximising system utilisation. Ion beam etch offers maximum flexibility coupled with excellent uniformity.
Our systems have flexible hardware options including open load, single substrate load lock and cassette to cassette. System specifications are closely tuned to applications, enabling faster and repeatable process results.
Wafer size |
100 mm |
200 mm |
Etch RF ion source |
15 cm |
30 cm |
Substrate rotation speed |
Up to 20 RPM | |
Substrate tilt angle |
-90° horizontal to +65° facing down | |
Platen temperature |
10 °C to 300 °C chiller or heater configuration | |
A compact ion beam etch and deposition system designed for flexible research and pilot production, equipped with up to two (15cm) ion sources for etch or deposition. This makes it ideal for deposition on up to 200 mm wafer size and etch process optimised for up to 100 mm wafer size.
Having essentially the same footprint but with a larger process chamber, it is designed to process wafers up to 200 mm for both etch and deposition. Equipped with a 30 cm etch ion source, the system provides excellent etch uniformity and superior process stability, making it a great choice for pilot and full scale production.
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