Inductively Coupled Plasma Chemical Vapour Deposition (ICPCVD)

Delivers deposition of high quality dielectric films at low temperature with low damage

PlasmaPro 100 ICPCVD

Achieves superior film quality with low substrate damage

Inductively Coupled Plasma Chemical Vapour Deposition (ICPCVD)

Independent control of ion energy and ion current density
Typical process pressure: 1- 10 mtorr
Plasma density: >10¹¹ cm^-3
Plasma in contact with the substrate
Low energy ion current during deposition
Ion Current (Plasma Density) dependent on ICP power
ESS (electrostatic screen) for a purely inductive plasma
ICP is fully automatic (2 RF automatch units)

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Overview
Features and benefits

Overview of ICPCVD

Creation of high density plasmas in the ICP source means this technique delivers deposition of high quality dielectric films at low temperature with low damage. Low temperature deposition means that temperature sensitive films and devices can be processed successfully.

Our ICP CVD process modules are designed to produce high
quality films with high density plasmas at low deposition
pressures and temperatures.

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Features and benefits of ICPCVD

Excellent quality low damage films at reduced temperatures.
Typical materials deposited include SiO₂, Si₃N₄ and SiON, Si and SiC at substrate temperatures as low as 5ºC
ICP source sizes of 65mm, 180mm, 300mm delivering process uniformity up to 200mm wafers
Electrodes available for temperature ranges from 5ºC to 400ºC
Patented ICPCVD gas distribution technology
In situ chamber cleaning with endpointing

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Featured ICPCVD products

PlasmaPro 100 ICPCVD

This ICPCVD process module is designed to produce high quality films at low growth temperatures, enabled through high-density remote plasmas that achieves superior film quality with low substrate damage.

Excellent uniformity, high throughput and high precision processes
High quality films
Wide temperature range electrode
Compatible with all wafer sizes up to 200mm
Rapid change between wafer sizes
Low cost of ownership and ease of serviceability
Compact footprint, flexible layout
Resistive heated electrodes with capability up to 400°C or 1200°C
In-situ chamber cleaning and end-pointing
Flexible vapour delivery module enabling deposition of films using liquid precursors e.g. TiO₂ using TTIP, SiO₂ using TEOS

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Applications for PlasmaPro 100 ICPCVD

Excellent quality low damage films at reduced temperatures.
Typical materials deposited include SiO₂, Si₃N₄ and SiON, Si and SiC at substrate temperatures as low as 5ºC
ICP source sizes of 65mm, 180mm, 300mm delivering process uniformity
up to 200mm wafers
Electrodes available for temperature ranges from 5ºC to 400ºC
Patented ICPCVD gas distribution technology
In situ chamber cleaning with endpointing
Flexible vapour delivery module enabling deposition of films using liquid precursors e.g. TiO₂ using TTIP, SiO₂ using TEOS

Global customer support

Oxford Instruments is committed to providing a comprehensive, flexible and reliable global customer support. We offer excellent quality service throughout the life of your system.

Remote diagnostics software provides quick and easy fault diagnosis and resolution.
Support contracts are available to suit the budget and situation.
Global spares in strategic locations for quick response.

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NEW: PTIQ software

PTIQ is the latest intelligent software solution for PlasmaPro and Ionfab processing equipment.

Exceptional level of responsive system control
Optimise system and process performance
Different levels of software to suit your requirements
Brand new intuitive layout and design

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Explore our comprehensive Training Training courses

At Oxford Instruments Plasma Technology, we offer a wide range of technical training courses designed to suit all skill levels and needs.

Level 1 (Introductory): New system users for all platforms
Level 2 (Intermediate): Equipment and maintenance training for all platforms
Level 3 (Advanced): for Plasma, Ion Beam and ALD systems
Specialist Technical Modules: process and handler technical training for all platforms

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