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Atomic Scale Processing (ASP) means wafer-scale processing with control at the atomic scale. This atomic-level control extends to deposition of thin films, removal or etching of material, and growth of 1D and 2D materials with their distinctive unique properties such as graphene.
Our range of plasma processing systems provides a complete solution to Atomic Scale Processing. We provide unique cluster capability or stand alone systems enabling the manipulation of matter with atomic scale precision on a production scale.
ALD of dielectrics, nitrides and metals with low damage. Our unique cluster capability provides the ability to cover surfaces directly without exposure to air. For instance these could be etched interfaces or freshly grown 2D materials such as MoS2 or graphene covered by ALD dielectrics or capping layers which can be a big advantage for a wide range of devices.
ALD of dielectrics & metals with low damage
The video above shows the ALD process in the FlexAL chamber.
CVD & ALD of atomically thin structures: 1D and 2D materials.
Unique devices can be constructed by covering nanowires with ALD films or etching 1D and 2D materials to tune their properties.
CVD growth of ZnO nanowires using DEZn precursors.
(Courtesy of Nanoscience Centre, Univ. of Cambridge)
CVD growth of hBN
ALE of Silicon, GaN & 2D materials. As these materials perform essential functions in a wide range of devices, our ability to etch these with extreme control and low damage can be an enabling technology. Furthermore combining ALE with deposition and growth will provide unique advantages in your device making.
Based on production-proven platform for corporate/specialised R&D, PlasmaPro ASP has been designed to ensure high quality materials that can be deposited at speed with flexibility to run multiple chemistries to give excellent layers for incorporation into devices. Our cutting-edge plasma enhanced ALD (PEALD) system offers flexibility, conformality, and tunability of ALD with speed for higher throughput and thicker films.
Faster than conventional remote plasma
Low cost of ownership
Improved serviceability and maintenance
Low volume chamber for speed
Low substrate damage
PlasmaPro ASP has shared platform with Atomfab to deliver fast and low damage remote PEALD. Remote PEALD offers superior device performance compared to thermal ALD and direct plasma ALD. It is compact to limit the effective chamber volume for rapid gas exchange and it is effective over the full 200 mm wafer diameter.
450 nm conformal SiO2 deposited in 32:1 aspect ratio trench using PlasmaPro ASP.
130 nm conformal superconducting NbN deposited in 8:1 aspect ratio trench using PlasmaPro ASP.
Specifications |
PlasmaPro ASP |
Precursor lines |
Maximum 6 (any combination) |
Precursor size (ml) |
200 |
Precursor type |
|
Handling |
Loadlock |
Gas pod |
4 Process + 1 Ar (onboard) |
Electrode |
400 °C grounded/ biased |
Roughing pump |
600 m3/hr |
Compliance |
UL Standard, designed for SEM 2S |
Software |
PTIQ |
PEALD process library |
Al2O3, SiO2, NbN, TiN, more in development |
The PlasmaPro 100 ALE delivers precise process control of etching for next-generation semiconductor devices. Specially designed for processes such as recess etching for GaN HEMT applications and nanoscale layer etching, the system's digital/cyclical etch process offers low damage, smooth surfaces.
As layers become thinner to enable the next-generation semiconductor devices, there is a need for ever more precise process control to create and manipulate these layers. The PlasmaPro 100 ALE delivers this by enhancing our Cobra ICP platform with specialised hardware for atomic layer etching.
Solutions for your productions needs:
Atomfab's ALD technology offers precisely controlled ultra‑thin films for advanced applications on the nanometre scale, with conformal coating of sensitive substrate structures.
Read more about how ALD can optimise GaN power devices in our white paper.
Revolutionary plasma source: Atomfab system uses a patent pending remote source specifically designed for atomic scale processing.
Plasma ALD Al2O3 at 300 °C |
Specification |
Within wafer thickness uniformity |
<±1.0% |
Wafer-to-wafer thickness repeatability |
<±1.0% |
Breakdown voltage |
≥7.0 MV/cm |
Oxford Instruments is committed to providing a comprehensive, flexible and reliable global customer support. We offer excellent quality service throughout the life of your system.
PTIQ is the latest intelligent software solution for PlasmaPro and Ionfab processing equipment.
At Oxford Instruments Plasma Technology, we offer a wide range of technical training courses designed to suit all skill levels and needs.
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