Ion Beam Etching (or milling) is achieved by directing a beam of charged particles (ions) at a substrate with a suitably patterned mask in a high vacuum chamber. It enables highly-directional beams of neutral ions to control over the sidewall profile as well as radial uniformity optimisation and feature shaping during nanopatterning. Tilted features can be created by the unique ability to tilt the sample altering the direction of impact of the ion beam. Ion beam etching can be applied in two ways: using inert ions for a physical etching or milling process, or using RIBE for reactive ion species to increase material etching with a chemical/reactive component.
|Ionfab 300 |
|Ion Etching Source||150mm or 300mm for up to 4" and 8" respectively|
|Etching Area||Up to 200mm diameter or 150mm square|
|Platen Speed||Up to 20rpm|
|Platen Tilt Angle||65º to 90º relative to beam direction|
|Platen Heat||Embedded heaters up to 300ºC with PID control|
|Platen Cooling||Fluid coolant 5ºC to 60ºC with He backside (up to 50Torr) for substrate cooling/heating|