Atomic layer deposition of dielectrics, nitrides and metals with low damage. Our unique cluster capability provides the ability to cover surfaces directly without exposure to air. For instance these could be etched interfaces or freshly grown 2D materials such as MoS2 or graphene covered by ALD dielectrics or capping layers which can be a big advantage for a wide range of devices.
Atomic layer deposition of dielectrics & metals with low damage
Chemical Vapour Deposition & ALD of atomically thin structures: 1D & 2D materials.
Unique devices can be constructed by covering nanowires with ALD films or etching 1D and 2D materials to tune their properties.
CVD growth of ZnO nanowires using DEZn precursors.
(Courtesy of Nanoscience Centre, Univ. of Cambridge)
CVD growth of hBN
Atomic layer etching of Silicon, GaN & 2D materials. As these materials perform essential functions in a wide range of devices, our ability to etch these with extreme control and low damage can be an enabling technology. Furthermore combining ALE with deposition and growth will provide unique advantages in your device making.
25nm wide Si trenches etched to 110nm depth by ALE, HSQ mask still in place.
Atomfab is the fastest remote plasma ALD system for HVM on the market, specifically designed for manufacturing GaN HEMT and RF Devices.