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Atomic Layer Etching (ALE)

ALE is an advanced etch technique that allows for excellent depth control on shallow features. As device feature size reduces further and further ALE is required to achieve the accuracy required for peak performance.

Atomic layer etching

Highlights

  • Ultra low damage
  • High selectivity
  • Ultra accurate depth control
  • Ultra low power operation
  • Ability to etch in ALE or normal etch mode
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Read the article

Atomic layer etching: What for?

Read our article in Compund Semiconductor

Written by Dr Mike Cooke and Dr Andy Goodyear for Compound Semiconductor magazine


Atomic layer etching promises to improve the quality of GaN-based HEMTs and eradicate the damage associated with high etching rates

  • Etch rates 2 to 7Å/cycle
  • Demonstrated results in a-Si, Si, SiO2, MoS2, GaN, AlGaN layer etching
  • Fast recipe control down to 10ms
  • ALD-style gas dose delivery using “ALD valves” with 10ms open-close response

 

25nm wide Si trenches etched to 110nm depth by ALE, HSQ mask still in place

25nm wide Si trenches etched to 110nm depth by ALE, HSQ mask still in place

ALE cycle
AlGaN EPC
Download ALE brochure

ALE Systems