Part of the Oxford Instruments Group
Expand
PROCESS SOLUTIONS FOR
POWER DEVICES

SILICON CARBIDE (SiC) & GALLIUM NITRIDE (GaN) POWER DEVICES

Efficient power switching and conversion devices are used to make possible new technologies such as electric cars and local power creation and distribution networks. Advances in device performance through use of materials such as SiC and GaN means lower energy losses. Oxford Instruments has a deep understanding of how to make the most optimised devices through its process solutions such as atomic layer deposition, plasma etching and plasma deposition.

POWER DEVICE SOLUTIONS

  • Our Atomic Layer Deposition (ALD) processes provide excellent passivation of GaN/AlGaN reducing threshold voltage shift
  • Our GaN etch processes are optimised to reduce plasma damage and produce smooth etched profiles
  • Etch rates can be tuned to just a few nm/min for ultra low damage and controlled etch of just 10-30nm of AlGaN
  • SiC via etch achieves high rate with excellent sidewall quality
  • SiC feature etch shows smooth etch surfaces for optimal device performance
REQUEST MORE INFORMATION
Graph of Al2O3, SiO2 and TiO2 grown at room temperature

Al2O3, SiO2 and TiO2 grown at room temperature. Due to the high reactivity of plasma ALD, many processes work also at lower temperatures.

SiC hole etch SEM image

SiC via hole etched to >200μm depth, AR >4:1, Etch rate >1μm/min

SiC hole etch close-up SEM image

Close-up SiC via hole etch SEM image.

Smooth and vertical SiC feature etch

Smooth and vertical SiC feature etch.

WHITE PAPER

World Leading Plasma Process Solutions for the Manufacture of SiC Power Devices

Silicon carbide white paper on plasma processing solutions for SiC power devices

In this white paper, we consider the role of plasma processing and its importance in defining device performance and optimal strategies for the application. We also examine the structure of primary SiC devices such as Schottky barrier diodes (SBDs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs).

READ NOW

WEBINAR

Enabling the SiC Revolution: Plasma Processing for Better Performance

Silicon carbide webinar discussing the top 5 ways plasma processing can be used for SiC devices

In this webinar, we presents the top 5 ways plasma processing can be used to enhance SiC device performance. We look at surface preparation using plasma etching; mask deposition using PECVD; high etch-rate etching of mesas and trenches; depostion of barrier layers to improve interfaces and efficiency, and more.

WATCH NOW ON-DEMAND

RELATED PRODUCTS