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Process solutions for
Power Devices

Silicon Carbide (SiC) and Gallium Nitride (GaN) Power Devices

Efficient power switching and conversion devices are used to make possible new technologies such as electric cars and local power creation and distribution networks. Advances in device performance through use of materials such as SiC and GaN means lower energy losses. Oxford Instruments has a deep understanding of how to make the most optimised devices through its process solutions such as atomic layer deposition, plasma etching and plasma deposition.

Power Device Solutions

  • Our Atomic Layer Deposition (ALD) processes provide excellent passivation of GaN/AlGaN reducing threshold voltage shift
  • Our GaN etch processes are optimised to reduce plasma damage and produce smooth etched profiles
  • Etch rates can be tuned to just a few nm/min for ultra low damage and controlled etch of just 10-30nm of AlGaN
  • SiC via etch achieves high rate with excellent sidewall quality
  • SiC feature etch shows smooth etch surfaces for optimal device performance
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Graph of Al2O3, SiO2 and TiO2 grown at room temperature

Al2O3, SiO2 and TiO2 grown at room temperature. Due to the high reactivity of plasma ALD, many processes work also at lower temperatures.

SiC hole etch SEM image

SiC via hole etched to >200μm depth, AR >4:1, Etch rate >1μm/min

SiC hole etch close-up SEM image

Close-up SiC via hole etch SEM image.

Smooth and vertical SiC feature etch

Smooth and vertical SiC feature etch.

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