Efficient power switching and conversion devices are used to make possible new technologies such as electric cars and local power creation and distribution networks. Advances in device performance through use of materials such as SiC and GaN means lower energy losses. Oxford Instruments has a deep understanding of how to make the most optimised devices through its process solutions such as atomic layer deposition, plasma etching and plasma deposition.
Al2O3, SiO2 and TiO2 grown at room temperature. Due to the high reactivity of plasma ALD, many processes work also at lower temperatures.
SiC via hole etched to >200μm depth, AR >4:1, Etch rate >1μm/min
Close-up SiC via hole etch SEM image.
Smooth and vertical SiC feature etch.