Al2O3, SiO2 and TiO2 grown at room temperature. Due to the high reactivity of plasma ALD, many processes work also at lower temperatures.
SiC via hole etched to >200μm depth, AR >4:1, Etch rate >1μm/min
Close-up SiC via hole etch SEM image.
Smooth and vertical SiC feature etch.
In this white paper, we consider the role of plasma processing and its importance in defining device performance and optimal strategies for the application. We also examine the structure of primary SiC devices such as Schottky barrier diodes (SBDs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs).READ NOW
In this webinar, we presents the top 5 ways plasma processing can be used to enhance SiC device performance. We look at surface preparation using plasma etching; mask deposition using PECVD; high etch-rate etching of mesas and trenches; depostion of barrier layers to improve interfaces and efficiency, and more.WATCH NOW ON-DEMAND