The material properties of SiC such as high bandgap, high thermal conductivity, high breakdown field, provide potential performance far superior to Si in the power switching/conversion application field. These properties has made SiC very attractive in the electronics industry for power devices used in electric vehicles, trains and aerospace.
Oxford Instruments has a deep understanding of how to make the most optimised devices through its process solutions. With extensive experience in etching materials, we are enabling SiC manufacturers to achieve smooth sidewalls, excellent surface quality and the etch results you need to maintain your competitive edge.DOWNLOAD BROCHURE
Designed specifically for the harsh chemistries required for etching tough materials such as SiC, GaN and Sapphire, the PlasmaPro 100 Polaris delivers fast etch rates uniformly on wafers up to 200mm diameter.
SiC hole etch SEM image
SiC hole etch close-up SEM image
Smooth and vertical SiC feature etch