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Webinar
Plasma Processes for InP devices & III-V materials

21 October 2021 at 3PM (BST)

About the Webinar

Indium Phosphide (InP) is a direct bandgap III-V compound semiconductor with high electron mobility. This makes it ideal for optoelectronic devices such as high-frequency laser diodes (LD), photodiodes, microlens etc.  

To control the critical dimensions of these materials during the fabrication process, it is essential to achieve vertical profile, low device damage and excellent surface quality of the sidewalls to get the desirable results.

In this webinar, Dr Mark Dineen will focus on plasma etch solutions for InP and related materials, analysing two InP etch chemistries, CH4/Cl2/H2 and Cl2/Ar. Also, he will demonstrate the process requirements for the successful fabrication of a variety of optoelectronic devices: Laser diodes (LD), photo diode, Arrayed Waveguide Grating (AWG) and Microlens.

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Meet the Presenter

Dr Mark Dineen
Dr Mark Dineen

Dr Mark Dineen is an experienced Technical Marketing Manager with over 20 Years of plasma processing experience. His more recent work includes applying this knowledge to a wide range of devices from semiconductor lasers to GaN-based RF devices.

Plasma Processing Systems for InP 

PlasmaPro 100 Cobra ICP
PlasmaPro 100 PECVD Oxford Instruments

PlasmaPro 100 Cobra ICP

  • Wide temperature range electrode, -150°C to 400°C
  • High gas flow maintaining  low pressure
  • Delivers process uniformity up to 200mm wafers
  • Compact footprint, flexible layout
  • In-situ chamber cleaning and end-pointing

PlasmaPro 100 PECVD

  • High-quality films, high throughput, excellent uniformity
  • Compatible with all wafer sizes up to 200mm
  • Low cost of ownership and ease of serviceability
  • Resistive heated electrodes with capability up to 400°C or 1200°C
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