Oxford Instruments Plasma Technology has developed an innovative set of plasma process solutions designed to enable maximum Silicon Carbide (SiC) device performance.
SiC has a uniquely desirable set of properties for power device manufacture and is being progressively applied to achieve the breakthrough performance required to enable new and exciting technologies. A wide band gap semiconductor, SiC offers a high breakdown field and high thermal conductivity. These inherent advantages enable the production of power devices that answer closely to pressing industrial requirements for smaller, lighter, more efficient technology with the ability to operate at high temperatures. SiC power devices already have established benefit, and a considerable market, in power supply/power factor correction and photovoltaic applications. On the near horizon are electric and hybrid vehicles (EV and HV) and the associated infrastructure. Long term, the scope for substantial efficiency savings is considerable and extends well beyond these key applications.
In this White Paper we consider the role of plasma processing and its importance in defining device performance and optimal strategies for the application. We also examine the structure of primary SiC devices such as Schottky barrier diodes (SBDs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs).