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Part of the Oxford Instruments Group
A beam or energetic ions bombars and sputters material off a target, thereby forming a plume of material that gets deposited on the surface of the sample.
Ion beam deposited thin-film layer properties, such as refractive index, absorption, scattering, adhesion and packing density, can be finely tuned by varying beam parameters such as beam flux and energy, platen orientation relative to incoming materials and gas flow.
Ion Beam Deposition is one of three ways of depositing thin-film using Ion Beam Sputtering: IBD, RIBD and AIBD.
Reactive gases, like N2 or O2 are injected inside the chamber while the film is being deposited to adjust the stoichiometry of oxides or nitrides.
An assist source can also be used in conjunction with the deposition source to modify the properties of the film as it’s growing.
| Ionfab 300 | |
| Ion deposition source | 150mm |
| Deposited area | Up to 200mm |
| Number of targets | Up to 4 targets |
| Platen size | Up to 8 inch wafer |
| End product detection | Dual Xtal monitors or WLOM |
| Platen rotation | Up to 500rpm |
| Platen tilt angle | -90ºC (load position) to +65ºC |
| Platen heat | Embedded heaters up to 300ºC |
| Platen cooling | Helium |
| Assist or pre-clean source | 150mm and 300mm RF ion source |
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