SiC has a uniquely desirable set of properties for power device manufacturing and is being progressively applied to achieve the breakthrough performance required to enable new and exciting technologies.
Oxford Instruments Plasma Technology has developed an innovative set of plasma process solutions designed to enable maximum Silicon Carbide (SiC) device performance.
Find out how we can help you with SiC performance in our white paper and webinar.
In this White Paper, we consider the role of plasma processing and its importance in defining device performance and optimal strategies for the application.
We also examine the structure of primary SiC devices such as Schottky barrier diodes (SBDs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs).
Oxford Instruments Plasma Technology has developed an innovative set of plasma process solutions designed to enable maximum Silicon Carbide (SiC) device performance.
Read the White PaperIn this webinar, Dr Mark Dineen (Technical Marketing Manager, Oxford Instruments), presents the top 5 ways plasma processing can be used to enhance SiC device performance.
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