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Enabling the SiC Revolution: White Paper & Webinar

SiC has a uniquely desirable set of properties for power device manufacturing and is being progressively applied to achieve the breakthrough performance required to enable new and exciting technologies.

Oxford Instruments Plasma Technology has developed an innovative set of plasma process solutions designed to enable maximum Silicon Carbide (SiC) device performance.

Find out how we can help you with SiC performance in our white paper and webinar.

Read the White Paper Watch the Webinar
SiC Power Device White Paper front cover

White Paper
World Leading Plasma Process Solutions for the Manufacture of SiC Power Devices

In this White Paper, we consider the role of plasma processing and its importance in defining device performance and optimal strategies for the application.

We also examine the structure of primary SiC devices such as Schottky barrier diodes (SBDs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). 

Oxford Instruments Plasma Technology has developed an innovative set of plasma process solutions designed to enable maximum Silicon Carbide (SiC) device performance.

Read the White Paper

Webinar
Enabling the SiC Revolution: Plasma Processing for Better Performance

In this webinar, Dr Mark Dineen (Technical Marketing Manager, Oxford Instruments), presents the top 5 ways plasma processing can be used to enhance SiC device performance.

Topics include:

  • Surface preparation using plasma etching
  • Mask deposition and etching using PECVD
  • High etch-rate etching of mesas and trenches
  • Understanding etch profile
  • Depostion of barrier layers to improve interfaces and efficiency 
Watch the Webinar
SiC SEM image link to webinar

"SiC has a uniquely desirable set of properties for power device manufacture and is being progressively applied to achieve the breakthrough performance required to enable new and exciting technologies"..

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